Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA4 | P22748 | 1/20 | 0.42 |
| ▸ | LTA4H | P09960 | 4/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.37 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.34 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.34 |
| ▸ | ATM | Q13315 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | KCNA3 | P22001 | 1/20 | 0.33 |
| ▸ | CA5A | P35218 | 1/20 | 0.32 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | PGR | P06401 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | HTR1D | P28221 | 1/20 | 0.31 |
| ▸ | HTR1B | P28222 | 1/20 | 0.31 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.31 |
| ▸ | BAX | Q07812 | 1/20 | 0.31 |
| ▸ | MAOA | P21397 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7719268 | 0.78 | RIPK1 (0.38) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL5685404 | 0.76 | ALDH1A1 (0.39) | TSHRMAPK1ALDH1A1L3MBTL1CYP2D6 | |
| SCHEMBL1053931 | 0.75 | LTA4H (0.39) | CA4LTA4HTSHRALDH1A1KCNA3 | |
| SCHEMBL704144 | 0.74 | ATM (0.39) | CA4LTA4HTSHRRIPK1ATM | |
| SCHEMBL16061098 | 0.74 | LTA4H (0.34) | CA4LTA4HTSHRMAPK1RIPK1 | |
| SCHEMBL706293 | 0.70 | — | — | |
| SCHEMBL28728642 | 0.70 | KCNA3 (0.50) | LTA4HALDH1A1KCNA3HTR1DHTR1B | |
| SCHEMBL707758 | 0.69 | LTA4H (0.50) | CA4LTA4HTSHRALDH1A1ALOX15 | |
| SCHEMBL9162708 | 0.69 | CA4 (0.37) | CA4LTA4HTSHR | |
| Hydrochloric Acid SCHEMBL18528255 | 0.69 | CA4 (0.46) | CA4LTA4HTSHRALDH1A1KCNA3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3328922-A1 | HYDROXIDE-CATALYZED FORMATION OF SILICON-OXYGEN BONDS BY DEHYDROGENATIVE COUPLING OF HYDROSILANES AND ALCOHOLS | California Institute of Technology (US) | 2018-06-06 | — | — | EP | claimed |
| WO-2017019675-A1 | HYDROXIDE-CATALYZED FORMATION OF SILICON-OXYGEN BONDS BY DEHYDROGENATIVE COUPLING OF HYDROSILANES AND ALCOHOLS | CALIFORNIA INSTITUTE OF TECHNOLOGY (US) | 2017-02-02 | — | — | WO | claimed |
| CN-109641482-B | Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues | 株式会社普利司通 | 2021-11-05 | — | — | CN | disclosed |
| EP-2832807-A1 | UNDERLAYER FILM FORMING COMPOSITION FOR SELF-ASSEMBLED FILMS | Nissan Chemical Industries, Ltd. (JP) | 2015-02-04 | — | — | EP | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |