SCHEMBL704144

SCHEMBL704144

CC(C)([SiH2]Oc1ccccc1)C(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ATM Q13315 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
RIPK1 Q13546 2/20 0.36
SLC6A4 P31645 2/20 0.35
HRH1 P35367 3/20 0.34
CACNA1F O60840 1/20 0.34
CHRM2 P08172 1/20 0.34
CHRM1 P11229 1/20 0.34
ADRA2B P18089 1/20 0.34
CHRM3 P20309 1/20 0.34
ADRA1A P35348 1/20 0.34
OPRK1 P41145 1/20 0.34
CACNA1D Q01668 1/20 0.34
SLC6A3 Q01959 1/20 0.34
KCNH2 Q12809 1/20 0.34
CACNA1S Q13698 1/20 0.34
CACNA1C Q13936 1/20 0.34
SCN5A Q14524 1/20 0.34
CA4 P22748 1/20 0.33
SCN4A P35499 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7719268 0.80 RIPK1 (0.38) ATML3MBTL1RIPK1HRH1CACNA1F
SCHEMBL705924 0.77 RIPK1 (0.40) ATML3MBTL1RIPK1SLC6A4HRH1
SCHEMBL708398 0.76 LMNA (0.39) RIPK1SLC6A4HRH1CACNA1FCHRM2
SCHEMBL705016 0.74 CA4 (0.42) ATML3MBTL1RIPK1CA4LMNA
SCHEMBL9020522 0.73 ALDH1A1 (0.46) LMNA
SCHEMBL5369056 0.73 SCN4A (0.34) SLC6A4HRH1CHRM1ADRA2BOPRK1
SCHEMBL706842 0.73 LMNA (0.37) RIPK1SLC6A4HRH1CACNA1FCHRM2
SCHEMBL10879018 0.72 HRH1 (0.41) RIPK1SLC6A4HRH1SLC6A3KCNH2
SCHEMBL187205 0.71 RIPK1 (0.41) ATML3MBTL1RIPK1SLC6A4HRH1
SCHEMBL2480309 0.71 RIPK1 (0.41) ATML3MBTL1RIPK1SLC6A4HRH1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed