SCHEMBL705232

SCHEMBL705232

CCCCC(CCCC)[SiH2]OC(C)C

nearest known ligand 0.33

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.33
OPRM1 P35372 1/20 0.32
ALDH1A1 P00352 2/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27660666 0.75 DNM1 (0.36) DNM1ALDH1A1TDP1
SCHEMBL6708524 0.74 OPRM1 (0.41) DNM1OPRM1
SCHEMBL23093200 0.74
SCHEMBL704081 0.73 DNM1 (0.35) DNM1OPRM1ALDH1A1TDP1
SCHEMBL6706863 0.73 OPRM1 (0.39) DNM1OPRM1
SCHEMBL6709895 0.73 OPRM1 (0.39) DNM1OPRM1
SCHEMBL6707422 0.73 OPRM1 (0.39) DNM1OPRM1
SCHEMBL6708355 0.73 OPRM1 (0.39) DNM1OPRM1
SCHEMBL702801 0.71 DNM1 (0.33) DNM1ALDH1A1TDP1
SCHEMBL705012 0.71 ADRB2 (0.35) DNM1ALDH1A1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed