SCHEMBL705258

SCHEMBL705258

CC(C)(C)[Si](CCC[Si](Oc1ccccc1)(C(C)(C)C)C(C)(C)C)(Oc1ccccc1)C(C)(C)C

nearest known ligand 0.37

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.37
CA4 P22748 1/20 0.34
RIPK1 Q13546 1/20 0.34
CYP2D6 P10635 1/20 0.34
LTA4H P09960 4/20 0.33
HTR1B P28222 1/20 0.33
PPARA Q07869 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
TSHR P16473 1/20 0.32
MAPK1 P28482 1/20 0.31
RECQL P46063 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705358 0.96 KCNA3 (0.37) KCNA3CA4RIPK1CYP2D6LTA4H
SCHEMBL706731 0.92 CA4 (0.37) KCNA3CA4RIPK1CYP2D6LTA4H
SCHEMBL702274 0.83 CA4 (0.37) KCNA3CA4RIPK1CYP2D6LTA4H
SCHEMBL703440 0.80 KCNA3 (0.37) KCNA3CA4RIPK1LTA4HHTR1B
SCHEMBL702432 0.76 KCNH2 (0.38) KCNA3CA4RIPK1LTA4HHTR1B
SCHEMBL704045 0.75 CA4 (0.37) KCNA3CA4RIPK1CYP2D6LTA4H
SCHEMBL429409 0.73 CA4 (0.43) KCNA3CA4RIPK1CYP2D6LTA4H
SCHEMBL704371 0.72 KCNA3 (0.41) KCNA3CA4LTA4HHTR1BL3MBTL1
SCHEMBL703963 0.72 KCNA3 (0.41) KCNA3CA4LTA4HHTR1BL3MBTL1
SCHEMBL329378 0.72 KCNA3 (0.44) KCNA3CA4LTA4HHTR1BL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed