SCHEMBL706731

SCHEMBL706731

CC(C)(C)[Si](CC[Si](Oc1ccccc1)(C(C)(C)C)C(C)(C)C)(Oc1ccccc1)C(C)(C)C

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.37
RIPK1 Q13546 1/20 0.36
LTA4H P09960 3/20 0.35
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
PKM P14618 1/20 0.33
MAPK1 P28482 1/20 0.33
CYP2D6 P10635 1/20 0.33
LMNA P02545 2/20 0.32
KCNH2 Q12809 1/20 0.32
HTR1D P28221 1/20 0.32
HTR1B P28222 1/20 0.32
NPC1 O15118 2/20 0.32
RAB9A P51151 2/20 0.32
POLB P06746 1/20 0.32
CASP3 P42574 1/20 0.32
SENP7 Q9BQF6 1/20 0.32
HPGD P15428 1/20 0.32
MEN1 O00255 1/20 0.32
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705258 0.92 KCNA3 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL705358 0.92 KCNA3 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL702274 0.87 CA4 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL704045 0.78 CA4 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL429409 0.77 CA4 (0.43) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL703440 0.75 KCNA3 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL702432 0.75 KCNH2 (0.38) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL426731 0.75 CA4 (0.42) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL706748 0.75 CA4 (0.42) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL704145 0.74 CA4 (0.37) CA4RIPK1LTA4HTSHRKCNA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed