SCHEMBL704045

SCHEMBL704045

CC(C)(C)[Si](CC[Si](Oc1ccccc1)(Oc1ccccc1)C(C)(C)C)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.37
KCNH2 Q12809 2/20 0.36
RIPK1 Q13546 1/20 0.36
TAAR1 Q96RJ0 2/20 0.35
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
MAPK1 P28482 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
KIF11 P52732 1/20 0.33
CYP2D6 P10635 1/20 0.33
MAOB P27338 1/20 0.32
LMNA P02545 1/20 0.32
HTR1D P28221 1/20 0.32
HTR1B P28222 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703440 0.92 KCNA3 (0.37) CA4KCNH2RIPK1TAAR1LTA4H
SCHEMBL702432 0.92 KCNH2 (0.38) CA4KCNH2RIPK1TAAR1LTA4H
SCHEMBL707620 0.87 CA4 (0.37) CA4KCNH2RIPK1TAAR1LTA4H
SCHEMBL706731 0.78 CA4 (0.37) CA4KCNH2RIPK1LTA4HTSHR
SCHEMBL429409 0.77 CA4 (0.43) CA4KCNH2RIPK1LTA4HTSHR
SCHEMBL705358 0.75 KCNA3 (0.37) CA4KCNH2RIPK1LTA4HTSHR
SCHEMBL705258 0.75 KCNA3 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL426731 0.75 CA4 (0.42) CA4KCNH2RIPK1LTA4HTSHR
SCHEMBL706748 0.75 CA4 (0.42) CA4KCNH2RIPK1LTA4HTSHR
SCHEMBL702274 0.74 CA4 (0.37) CA4KCNH2RIPK1TAAR1LTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed