SCHEMBL702274

SCHEMBL702274

CC(C)(C)[Si](C[Si](Oc1ccccc1)(C(C)(C)C)C(C)(C)C)(Oc1ccccc1)C(C)(C)C

nearest known ligand 0.37

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.37
RIPK1 Q13546 1/20 0.36
LTA4H P09960 4/20 0.35
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
MAPK1 P28482 1/20 0.33
CYP2D6 P10635 1/20 0.33
HTR1B P28222 2/20 0.32
KCNH2 Q12809 1/20 0.32
LMNA P02545 1/20 0.32
HTR1D P28221 1/20 0.32
TAAR1 Q96RJ0 1/20 0.31
ALDH1A1 P00352 1/20 0.31
RECQL P46063 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706731 0.87 CA4 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL705358 0.83 KCNA3 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL705258 0.83 KCNA3 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL707620 0.78 CA4 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL429409 0.77 CA4 (0.43) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL426731 0.75 CA4 (0.42) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL706748 0.75 CA4 (0.42) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL704145 0.74 CA4 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL704045 0.74 CA4 (0.37) CA4RIPK1LTA4HTSHRKCNA3
SCHEMBL2368966 0.73 PREP (0.45) CA4RIPK1LTA4HTSHRMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed