SCHEMBL707823

SCHEMBL707823

CC(C)(C)O[SiH2]C(c1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SLC6A4 P31645 1/20 0.37
RIPK1 Q13546 2/20 0.35
ATM Q13315 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
CHRM2 P08172 2/20 0.33
ADRA1A P35348 2/20 0.33
AOC3 Q16853 1/20 0.33
MAPK1 P28482 1/20 0.33
CACNA1F O60840 1/20 0.33
CHRM1 P11229 1/20 0.33
ADRA2B P18089 1/20 0.33
CHRM3 P20309 1/20 0.33
HRH1 P35367 1/20 0.33
OPRK1 P41145 1/20 0.33
CACNA1D Q01668 1/20 0.33
SLC6A3 Q01959 1/20 0.33
KCNH2 Q12809 1/20 0.33
CACNA1S Q13698 1/20 0.33
CACNA1C Q13936 1/20 0.33
SCN5A Q14524 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8142566 0.81 SLC6A4 (0.40) SLC6A4RIPK1ATML3MBTL1CHRM2
SCHEMBL6899802 0.79 THRB (0.31) RIPK1ATML3MBTL1
SCHEMBL14841297 0.78 SLC6A4 (0.38) SLC6A4RIPK1ATML3MBTL1CHRM2
SCHEMBL704150 0.75 KMT2A (0.40) L3MBTL1HRH1KMT2ATSHRADRA2C
SCHEMBL587674 0.75 DPP4 (0.36) CHRM2ADRA1AMAPK1HRH1KMT2A
SCHEMBL433140 0.74 DPP4 (0.39) SLC6A4MAPK1HRH1SLC6A3KMT2A
SCHEMBL705271 0.71 TAAR1 (0.37) L3MBTL1KMT2ACYP2D6TSHRADRA2C
SCHEMBL706548 0.71 HRH1 (0.39) SLC6A4RIPK1CHRM2ADRA1ACACNA1F
SCHEMBL242576 0.70 LMNA (0.40) ATML3MBTL1HRH1KMT2AHTR2A
SCHEMBL17865441 0.68 DPP4 (0.35) SLC6A4MAPK1HRH1SLC6A3KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed