Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 1/20 | 0.41 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.41 |
| ▸ | NR1H2 | P55055 | 3/20 | 0.38 |
| ▸ | NR1H3 | Q13133 | 3/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL705802 | 0.90 | NR1H2 (0.31) | NR1H2NR1H3 | |
| SCHEMBL703701 | 0.81 | ESR1 (0.37) | ESR1ESR2NR1H2NR1H3MAPK1 | |
| SCHEMBL703604 | 0.81 | ESR1 (0.37) | ESR1ESR2NR1H2NR1H3MAPK1 | |
| SCHEMBL703641 | 0.81 | ESR1 (0.37) | ESR1ESR2NR1H2NR1H3MAPK1 | |
| SCHEMBL707822 | 0.81 | ESR1 (0.37) | ESR1ESR2NR1H2NR1H3MAPK1 | |
| SCHEMBL3482029 | 0.79 | NR1H2 (0.46) | ESR1ESR2NR1H2NR1H3MAPK1 | |
| SCHEMBL15309958 | 0.79 | ESR1 (0.36) | ESR1ESR2NR1H2NR1H3MAPK1 | |
| SCHEMBL430199 | 0.78 | MAPK1 (0.37) | ESR1ESR2NR1H2NR1H3MAPK1 | |
| SCHEMBL191229 | 0.78 | MAPK1 (0.37) | ESR1ESR2NR1H2NR1H3MAPK1 | |
| SCHEMBL704060 | 0.78 | MAPK1 (0.37) | ESR1ESR2NR1H2NR1H3MAPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10991571-B2 | High temperature atomic layer deposition of silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2021-04-27 | — | — | US | claimed |
| US-20190189431-A1 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films | VERSUM MATERIALS US, LLC (US) | 2019-06-20 | — | — | US | claimed |
| US-20170256399-A9 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2017-09-07 | — | — | US | claimed |
| US-20160365244-A1 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-12-15 | — | — | US | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
| US-10991571-B2 | High temperature atomic layer deposition of silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2021-04-27 | — | — | US | disclosed |
| US-10916437-B2 | Methods of forming micropatterns and substrate processing apparatus | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-02-09 | — | — | US | disclosed |
| US-20190198342-A1 | Methods of Forming Micropatterns and Substrate Processing Apparatus | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-06-27 | — | — | US | disclosed |
| US-20190189431-A1 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films | VERSUM MATERIALS US, LLC (US) | 2019-06-20 | — | — | US | disclosed |
| US-10242864-B2 | High temperature atomic layer deposition of silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2019-03-26 | — | — | US | disclosed |
| US-9887080-B2 | Method of forming SiOCN material layer and method of fabricating semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-02-06 | — | — | US | disclosed |
| US-20170256399-A9 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2017-09-07 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-7604866-B2 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2009-10-20 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-20060269724-A1 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2006-11-30 | — | — | US | disclosed |
| US-20040077757-A1 | Coating composition for use in producing an insulating thin film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2004-04-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10242864-B2 | High temperature atomic layer deposition of silicon oxide thin films | SCN4A, RTN3, RPS4X | ESR1 1354/4885ESR2 786/4885NR1H2 167/4885 |
| US-20190189431-A1 | High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films | VIM, CDH1, ALDOA | ESR1 871/4885ESR2 1795/4885NR1H2 1359/4885 |
| US-10991571-B2 | High temperature atomic layer deposition of silicon oxide thin films | VIM, CDH1, ALDOA | ESR1 871/4885ESR2 1795/4885NR1H2 1359/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.