SCHEMBL705318

SCHEMBL705318

CCCCOC(C[SiH2]c1ccc([SiH2]CC(OCCCC)OCCCC)cc1)OCCCC

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 5/20 0.33
RAB9A P51151 2/20 0.33
NPC1 O15118 1/20 0.33
CA12 O43570 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA7 P43166 1/20 0.33
CA9 Q16790 1/20 0.33
LMNA P02545 3/20 0.33
HTT P42858 1/20 0.33
ESR1 P03372 2/20 0.33
CYP1A2 P05177 2/20 0.33
CYP2C19 P33261 2/20 0.33
CYP2D6 P10635 1/20 0.33
MAPK1 P28482 1/20 0.33
NR1H2 P55055 1/20 0.33
RNASEL Q05823 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
LTA4H P09960 2/20 0.32
HPGD P15428 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707480 0.88
SCHEMBL704213 0.81 TSHR (0.32) TSHRRAB9ACA12CA1CA2
SCHEMBL706662 0.80 TSHR (0.31) TSHRCA12CA1CA2CA7
SCHEMBL704750 0.79 PKM (0.33) LMNA
SCHEMBL31094241 0.79 HPGD (0.35) TSHRLMNAHTTSMN1; SMN2LTA4H
SCHEMBL707588 0.73 ADRB2 (0.35) TSHRCA1CA2ALDH1A1CYP3A4
SCHEMBL704789 0.72 LTA4H (0.34) TSHRRAB9ACA1CA2LMNA
SCHEMBL703939 0.71 DNM1 (0.33) TSHRCA1CA2CYP3A4
SCHEMBL707073 0.71 DNM1 (0.33) TSHRCA1CA2CYP3A4
SCHEMBL705596 0.71 DNM1 (0.33) TSHRCA1CA2CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed