SCHEMBL705469

SCHEMBL705469

CCC(c1ccccc1)[SiH](OC(C)C)OC(C)C

nearest known ligand 0.41

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.41
TRPA1 O75762 4/20 0.37
TAAR1 Q96RJ0 4/20 0.36
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
SCN1A P35498 2/20 0.34
SCN2A Q99250 2/20 0.34
SCN3A Q9NY46 2/20 0.34
MIF P14174 1/20 0.34
CHRM2 P08172 1/20 0.33
CHRM4 P08173 1/20 0.33
CHRM5 P08912 1/20 0.33
CYP2D6 P10635 1/20 0.33
CHRM1 P11229 1/20 0.33
CHRM3 P20309 1/20 0.33
SIGMAR1 Q99720 1/20 0.33
HKDC1 Q2TB90 1/20 0.33
AOC3 Q16853 1/20 0.33
FFAR1 O14842 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703614 0.85 AOC3 (0.38) LMNATRPA1TAAR1MEN1KMT2A
SCHEMBL705765 0.80 LMNA (0.43) LMNATRPA1TAAR1MEN1KMT2A
SCHEMBL707897 0.78 LMNA (0.42) LMNATRPA1TAAR1MEN1KMT2A
SCHEMBL706394 0.77 TAAR1 (0.38) LMNATRPA1TAAR1SCN1ASCN2A
SCHEMBL704671 0.77 LMNA (0.41) LMNATRPA1MIFHKDC1FFAR1
SCHEMBL702246 0.76 LMNA (0.39) LMNATAAR1MEN1KMT2ASCN1A
SCHEMBL705418 0.73 LMNA (0.41) LMNAMEN1KMT2ACYP2D6
SCHEMBL706283 0.73 LTA4H (0.41) LMNA
SCHEMBL708302 0.73 LMNA (0.48) LMNATRPA1TAAR1MEN1KMT2A
SCHEMBL27934269 0.73 LMNA (0.48) LMNATRPA1TAAR1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed