SCHEMBL705786

SCHEMBL705786

CCCCCC(CCCC)O[SiH2]CCCC[SiH2]OC(CCCC)CCCCC

nearest known ligand 0.36

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.36
OPRM1 P35372 1/20 0.34
LMNA P02545 1/20 0.32
CA2 P00918 1/20 0.31
SMPD1 P17405 3/20 0.31
FDPS P14324 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704550 0.98 DNM1 (0.39) DNM1OPRM1LMNACA2SMPD1
SCHEMBL704163 0.98 DNM1 (0.39) DNM1OPRM1LMNACA2SMPD1
SCHEMBL706751 0.96 DNM1 (0.36) DNM1OPRM1LMNACA2SMPD1
SCHEMBL705853 0.96 OPRM1 (0.34) DNM1OPRM1LMNASMPD1FDPS
SCHEMBL703662 0.96 DNM1 (0.33) DNM1
SCHEMBL5574584 0.94 DNM1 (0.39) DNM1LMNACA2
SCHEMBL5575126 0.94 LMNA (0.35) DNM1OPRM1LMNASMPD1FDPS
SCHEMBL5574607 0.94 DNM1 (0.39) DNM1LMNACA2
SCHEMBL703889 0.94 LMNA (0.35) DNM1OPRM1LMNASMPD1FDPS
SCHEMBL5574590 0.94 LMNA (0.35) DNM1OPRM1LMNASMPD1FDPS

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed