SCHEMBL706751

SCHEMBL706751

CCCCCC(CCCC)O[SiH2]CCC[SiH2]OC(CCCC)CCCCC

nearest known ligand 0.36

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.36
OPRM1 P35372 1/20 0.34
LMNA P02545 1/20 0.32
CA2 P00918 1/20 0.31
SMPD1 P17405 3/20 0.31
FDPS P14324 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708162 0.98 DNM1 (0.39) DNM1OPRM1LMNACA2SMPD1
SCHEMBL702434 0.98 DNM1 (0.39) DNM1OPRM1LMNACA2SMPD1
SCHEMBL713161 0.96 OPRM1 (0.34) DNM1OPRM1LMNASMPD1FDPS
SCHEMBL705786 0.96 DNM1 (0.36) DNM1OPRM1LMNACA2SMPD1
SCHEMBL707568 0.96 DNM1 (0.33) DNM1
SCHEMBL704163 0.94 DNM1 (0.39) DNM1OPRM1LMNACA2SMPD1
SCHEMBL702102 0.94 LMNA (0.35) DNM1OPRM1LMNASMPD1FDPS
SCHEMBL704550 0.94 DNM1 (0.39) DNM1OPRM1LMNACA2SMPD1
SCHEMBL705226 0.93 CTSK (0.33) DNM1
SCHEMBL702775 0.93 DNM1 (0.37) DNM1OPRM1LMNACA2SMPD1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed