SCHEMBL705957

SCHEMBL705957

CC(c1ccccc1)[SiH](Br)Br

nearest known ligand 0.48

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 4/20 0.42
KDM4E B2RXH2 2/20 0.41
ADRA2A P08913 1/20 0.41
ADRA2C P18825 1/20 0.41
CYP2D6 P10635 1/20 0.41
LMNA P02545 1/20 0.41
HIF1A Q16665 1/20 0.41
ALDH1A1 P00352 2/20 0.39
DPP4 P27487 2/20 0.39
F2 P00734 1/20 0.39
TSHR P16473 1/20 0.39
MIF P14174 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28772261 0.74 TAAR1 (0.44) TAAR1KDM4EADRA2AADRA2CCYP2D6
SCHEMBL8764960 0.74 TAAR1 (0.44) TAAR1KDM4EADRA2AADRA2CCYP2D6
SCHEMBL702838 0.72 TAAR1 (0.42) TAAR1KDM4EADRA2AADRA2CCYP2D6
SCHEMBL22283511 0.72 TAAR1 (0.42) TAAR1KDM4EADRA2AADRA2CCYP2D6
SCHEMBL11727695 0.72 ADRA2C (0.46) TAAR1KDM4EADRA2AADRA2CCYP2D6
SCHEMBL297260 0.72 DPP4 (0.46) TAAR1KDM4EADRA2AADRA2CCYP2D6
SCHEMBL467831 0.72 CES2 (0.42) TAAR1CYP2D6LMNADPP4F2
SCHEMBL708302 0.72 LMNA (0.48) TAAR1LMNAMIF
SCHEMBL1551 0.71
SCHEMBL2312133 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed