SCHEMBL706198

SCHEMBL706198

CC(=O)O[SiH](CCCCc1ccccc1)OC(C)=O

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.47
RXFP1 Q9HBX9 1/20 0.47
HDAC1 Q13547 6/20 0.46
ALDH1A1 P00352 3/20 0.46
HDAC2 Q92769 3/20 0.46
HDAC3 O15379 2/20 0.46
HDAC4 P56524 2/20 0.46
HDAC7 Q8WUI4 2/20 0.46
HDAC10 Q969S8 2/20 0.46
HDAC11 Q96DB2 2/20 0.46
HDAC8 Q9BY41 2/20 0.46
HDAC6 Q9UBN7 2/20 0.46
HDAC9 Q9UKV0 2/20 0.46
HDAC5 Q9UQL6 2/20 0.46
MAPK1 P28482 1/20 0.46
ADRA1A P35348 1/20 0.46
SLC6A3 Q01959 1/20 0.46
SMN1; SMN2 Q16637 1/20 0.46
ALOX5 P09917 2/20 0.45
HPGD P15428 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705417 0.95 ALDH1A1 (0.47) MAPTRXFP1HDAC1ALDH1A1HDAC2
SCHEMBL704103 0.88 ALDH1A1 (0.50) MAPTRXFP1HDAC1ALDH1A1HDAC2
SCHEMBL150539 0.77 ALDH1A1 (0.52) HDAC1ALDH1A1HDAC2HDAC3HDAC4
SCHEMBL704369 0.77 L3MBTL1 (0.47) KMT2ATDP1
SCHEMBL19470840 0.75 SIGMAR1 (0.48) MAPTRXFP1TDP1
SCHEMBL19470846 0.75 SIGMAR1 (0.48) MAPTRXFP1TDP1
SCHEMBL19470822 0.75 SIGMAR1 (0.48) MAPTRXFP1TDP1
SCHEMBL6325312 0.75 SIGMAR1 (0.48) MAPTRXFP1TDP1
SCHEMBL3110910 0.75 SIGMAR1 (0.48) MAPTRXFP1TDP1
SCHEMBL19470849 0.75 SIGMAR1 (0.48) MAPTRXFP1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed