SCHEMBL713409

SCHEMBL713409

CC(C)(C)O[SiH2]CCC(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HRH1 P35367 8/20 0.41
HTR2A P28223 7/20 0.41
RIPK1 Q13546 2/20 0.39
CHRM2 P08172 2/20 0.38
CHRM1 P11229 2/20 0.38
ADRA1A P35348 2/20 0.38
SLC6A3 Q01959 2/20 0.38
KCNH2 Q12809 2/20 0.38
CYP3A4 P08684 2/20 0.38
HTR1A P08908 1/20 0.38
ADRA2A P08913 1/20 0.38
ADORA3 P0DMS8 1/20 0.38
SMPD1 P17405 1/20 0.38
DRD1 P21728 1/20 0.38
TBXA2R P21731 1/20 0.38
SLC6A2 P23975 1/20 0.38
SLC6A4 P31645 1/20 0.38
OPRM1 P35372 1/20 0.38
DRD3 P35462 1/20 0.38
CASR P41180 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706548 0.81 HRH1 (0.39) HRH1HTR2ARIPK1CHRM2CHRM1
SCHEMBL705040 0.79 HRH1 (0.45) HRH1HTR2ACHRM2CHRM1ADRA1A
SCHEMBL703036 0.76 CYP3A4 (0.43) HRH1HTR2ARIPK1CHRM2CHRM1
SCHEMBL705237 0.76 HRH1 (0.42) HRH1HTR2ACHRM2CHRM1ADRA1A
SCHEMBL15135577 0.73 ALDH1A1 (0.38) HTR2ASLC6A2LMNACYP2D6MEN1
SCHEMBL705340 0.73 HRH1 (0.43) HRH1HTR2ACHRM2CHRM1ADRA1A
SCHEMBL702334 0.73 HRH1 (0.40) HRH1HTR2ACHRM2CHRM1ADRA1A
SCHEMBL3338048 0.70 IDO1 (0.41) HTR2ACHRM2CHRM1ADRA1ASLC6A3
SCHEMBL702750 0.70 SIGMAR1 (0.41) HRH1HTR2ACHRM2CHRM1ADRA1A
SCHEMBL29235981 0.68 AOC3 (0.40) RIPK1CYP3A4SLC6A2LMNACYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed