SCHEMBL706549

SCHEMBL706549

CC(C)(C)O[SiH2]C(C)(c1ccccc1)c1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.44
ALDH1A1 P00352 3/20 0.41
ALOX15 P16050 1/20 0.41
MAPT P10636 1/20 0.39
KMT2A Q03164 1/20 0.39
TSHR P16473 2/20 0.39
TAAR1 Q96RJ0 1/20 0.37
ESR1 P03372 2/20 0.35
ESR2 Q92731 2/20 0.35
CYP3A4 P08684 1/20 0.35
KCNN4 O15554 4/20 0.34
KIF11 P52732 2/20 0.33
CYP2C19 P33261 1/20 0.33
HIF1A Q16665 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2872078 0.79 MAPK1 (0.46) MAPK1ALDH1A1ALOX15MAPTKMT2A
SCHEMBL713410 0.77 MAPK1 (0.40) MAPK1ALDH1A1ALOX15KMT2ATSHR
SCHEMBL704362 0.74 MAPK1 (0.41) MAPK1ALDH1A1ALOX15MAPTKMT2A
Biphenyl SCHEMBL2500006 0.71 ALDH1A1 (0.45) MAPK1ALDH1A1ALOX15MAPTTSHR
SCHEMBL705574 0.71 MAPT (0.47) MAPK1ALDH1A1ALOX15MAPTKMT2A
SCHEMBL707097 0.70 MAPK1 (0.46) MAPK1ALDH1A1ALOX15MAPTKMT2A
SCHEMBL705506 0.69 MAPK1 (0.44) MAPK1ALDH1A1ALOX15MAPTKMT2A
SCHEMBL5143306 0.69 MAPT (0.48) MAPK1ALDH1A1ALOX15MAPTKMT2A
SCHEMBL706961 0.69 KCNN4 (0.44) MAPK1ALDH1A1ALOX15MAPTKMT2A
SCHEMBL23910519 0.68 MAPK1 (0.44) MAPK1ALDH1A1ALOX15MAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed