SCHEMBL706868

SCHEMBL706868

C[Si](C)(CCCC[Si](C)(C)Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.41
CA4 P22748 1/20 0.39
KCNH2 Q12809 1/20 0.38
LTA4H P09960 5/20 0.36
HTR1B P28222 2/20 0.36
TSHR P16473 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.35
RECQL P46063 1/20 0.33
HDAC3 O15379 1/20 0.33
HDAC4 P56524 1/20 0.33
HDAC1 Q13547 1/20 0.33
HDAC7 Q8WUI4 1/20 0.33
HDAC2 Q92769 1/20 0.33
HDAC10 Q969S8 1/20 0.33
HDAC11 Q96DB2 1/20 0.33
HDAC8 Q9BY41 1/20 0.33
HDAC6 Q9UBN7 1/20 0.33
HDAC9 Q9UKV0 1/20 0.33
HDAC5 Q9UQL6 1/20 0.33
DRD2 P14416 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703963 0.95 KCNA3 (0.41) KCNA3CA4KCNH2LTA4HHTR1B
SCHEMBL8961710 0.92 LTA4H (0.46) KCNA3KCNH2LTA4HDRD2DRD3
SCHEMBL707221 0.91 CA4 (0.42) KCNA3CA4KCNH2LTA4HHTR1B
SCHEMBL29134152 0.90 LTA4H (0.44) KCNH2LTA4HTSHRDRD2DRD3
SCHEMBL8961760 0.90 LTA4H (0.44) KCNH2LTA4HTSHRDRD2DRD3
SCHEMBL6987433 0.90 LTA4H (0.46) KCNA3KCNH2LTA4HTSHRRECQL
SCHEMBL3913247 0.88 KCNA3 (0.35) KCNA3CA4KCNH2LTA4HHTR1B
SCHEMBL3923699 0.88 KCNA3 (0.40) KCNA3CA4KCNH2LTA4HHTR1B
SCHEMBL13089513 0.84 CA4 (0.37) KCNA3CA4KCNH2LTA4HHTR1B
SCHEMBL8852301 0.83 LMNA (0.42) KCNA3TSHRL3MBTL1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed