SCHEMBL707816

SCHEMBL707816

F[SiH](F)CCCCc1ccccc1

nearest known ligand 0.52

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
MAOA P21397 1/20 0.52
MAOB P27338 2/20 0.50
SIGMAR1 Q99720 10/20 0.48
L3MBTL1 Q9Y468 1/20 0.47
MAPT P10636 1/20 0.45
RXFP1 Q9HBX9 1/20 0.45
HTR2A P28223 1/20 0.45
IGF1R P08069 1/20 0.44
ALOX15 P16050 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707338 0.93 SIGMAR1 (0.48) MAOAMAOBSIGMAR1L3MBTL1HTR2A
SCHEMBL702837 0.83 ALDH1A1 (0.48) MAOAMAOBSIGMAR1L3MBTL1HTR2A
SCHEMBL451456 0.80 MAOA (0.74) MAOAMAOBSIGMAR1L3MBTL1MAPT
SCHEMBL2803699 0.77 MAOA (0.52) MAOAMAOBSIGMAR1L3MBTL1
SCHEMBL10608209 0.77 MAOA (0.52) MAOAMAOBSIGMAR1L3MBTL1MAPT
SCHEMBL707928 0.77 MAOA (0.52) MAOAMAOBSIGMAR1L3MBTL1MAPT
SCHEMBL705290 0.77 MAOA (0.52) MAOAMAOBSIGMAR1L3MBTL1MAPT
SCHEMBL676854 0.77 SIGMAR1 (0.71) MAOAMAOBSIGMAR1L3MBTL1MAPT
SCHEMBL8094527 0.77 SIGMAR1 (0.71) MAOAMAOBSIGMAR1L3MBTL1MAPT
SCHEMBL8095284 0.77 SIGMAR1 (0.71) MAOAMAOBSIGMAR1L3MBTL1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed