SCHEMBL707980

SCHEMBL707980

CC(=O)O[Si](CC[Si](OC(C)=O)(OC(C)=O)OC(C)=O)(OC(C)=O)OC(C)=O

nearest known ligand 0.37

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.37
TSHR P16473 3/20 0.37
LMNA P02545 2/20 0.36
HSD17B10 Q99714 2/20 0.36
KDM4E B2RXH2 1/20 0.33
MAPK1 P28482 1/20 0.33
HIF1A Q16665 1/20 0.33
TDP1 Q9NUW8 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704685 0.88 KDM4E (0.36) ALDH1A1TSHRLMNAHSD17B10KDM4E
SCHEMBL703686 0.88 KDM4E (0.36) ALDH1A1TSHRLMNAHSD17B10KDM4E
SCHEMBL12898581 0.87
SCHEMBL303979 0.86 KDM4E (0.40) ALDH1A1TSHRLMNAHSD17B10KDM4E
SCHEMBL229663 0.86 ALDH1A1 (0.38) ALDH1A1TSHRLMNAHSD17B10TDP1
SCHEMBL11464462 0.84 TRPA1 (0.35) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL6390821 0.84 PAOX (0.37) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL11455842 0.84 ALDH1A1 (0.31) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL11211035 0.84 ALDH1A1 (0.31) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL5692043 0.84 ALDH1A1 (0.31) ALDH1A1TSHRLMNAHSD17B10TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 127 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1198616-B1 ACYLOXY SILANE TREATMENTS FOR METALS UNIV CINCINNATI (US) 2005-11-16 EP claimed
US-6955728-B1 Acyloxy silane treatments for metals UNIVERSITY OF CINCINNATI (US) 2005-10-18 US claimed
EP-4549504-A1 METHOD FOR THE DEPOLYMERIZATION OF SILICONE Universität Hamburg (DE) 2025-05-07 EP disclosed
US-20240228306-A9 DISPERSION OF EXFOLIATED PARTICLES OF LAYERED POLYSILICATE COMPOUND, AND METHOD FOR PRODUCING SAME NATIONAL UNIVERSITY CORPORATION KUMAMOTO UNIVERSITY (JP) 2024-07-11 US disclosed
US-20240213072-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-27 US disclosed
US-20240199924-A1 LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2024-06-20 US disclosed
US-20240201593-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-06-20 US disclosed
US-20240132365-A1 DISPERSION OF EXFOLIATED PARTICLES OF LAYERED POLYSILICATE COMPOUND, AND METHOD FOR PRODUCING SAME NATIONAL UNIVERSITY CORPORATION KUMAMOTO UNIVERSITY (JP) 2024-04-25 US disclosed
US-11966164-B2 Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group NISSAN CHEMICAL CORPORATION (JP) 2024-04-23 US disclosed
WO-2024063044-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2024-03-28 WO disclosed
US-20240069441-A1 COMPOSITION FOR RESIST UNDERLYING FILM FORMATION NISSAN CHEMICAL CORPORATION (JP) 2024-02-29 US disclosed
US-20100291487-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING UREA GROUP NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2010-11-18 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-7141306-B1 Sol-gel composition and process for coating aerospace alloys CESSNA AIRCRAFT COMPANY (US) 2006-11-28 US disclosed
EP-1198616-B1 ACYLOXY SILANE TREATMENTS FOR METALS UNIV CINCINNATI (US) 2005-11-16 EP disclosed
US-6955728-B1 Acyloxy silane treatments for metals UNIVERSITY OF CINCINNATI (US) 2005-10-18 US disclosed
EP-1198616-A1 ACYLOXY SILANE TREATMENTS FOR METALS THE UNIVERSITY OF CINCINNATI (US) 2002-04-24 EP disclosed
WO-2001006036-A1 ACYLOXY SILANE TREATMENTS FOR METALS UNIVERSITY OF CINCINNATI (GB) 2001-01-25 WO disclosed