SCHEMBL708046

SCHEMBL708046

CCCCO[Si](c1ccccc1)(c1ccccc1)c1ccc([Si](OCCCC)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.46

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
DUT P33316 1/20 0.46
LTA4H P09960 2/20 0.46
CYP1A2 P05177 2/20 0.40
CYP2C9 P11712 2/20 0.40
CYP2C19 P33261 2/20 0.40
TSHR P16473 4/20 0.39
TDP1 Q9NUW8 2/20 0.39
L3MBTL1 Q9Y468 2/20 0.39
CYP2D6 P10635 1/20 0.39
CYP19A1 P11511 1/20 0.39
SOAT1 P35610 1/20 0.36
ALDH1A1 P00352 2/20 0.36
TLR8 Q9NR97 1/20 0.36
CYP3A4 P08684 1/20 0.36
MAPK1 P28482 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705748 0.98 DUT (0.47) DUTLTA4HCYP1A2CYP2C9CYP2C19
SCHEMBL703766 0.88 DUT (0.41) DUTLTA4HTSHRSOAT1ALDH1A1
SCHEMBL703110 0.85 DUT (0.42) DUTLTA4HTSHRSOAT1ALDH1A1
SCHEMBL3868237 0.84 MEN1 (0.36) DUTCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL702280 0.84 LTA4H (0.46) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL1312954 0.84 LTA4H (0.40) DUTLTA4HCYP1A2CYP2C9CYP2C19
SCHEMBL1314590 0.83 LTA4H (0.39) DUTLTA4HCYP1A2CYP2C9CYP2C19
SCHEMBL7700690 0.82 LTA4H (0.41) DUTLTA4HCYP1A2CYP2C9CYP2C19
SCHEMBL431558 0.82 LTA4H (0.47) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL431649 0.82 LTA4H (0.47) LTA4HCYP1A2CYP2C9CYP2C19TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed