SCHEMBL702280

SCHEMBL702280

CCCCO[Si](OCCCC)(c1ccccc1)c1ccc([Si](OCCCC)(OCCCC)c2ccccc2)cc1

nearest known ligand 0.46

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.46
CYP1A2 P05177 2/20 0.40
CYP2C9 P11712 2/20 0.40
CYP2C19 P33261 2/20 0.40
TSHR P16473 3/20 0.39
TDP1 Q9NUW8 2/20 0.39
L3MBTL1 Q9Y468 2/20 0.39
CYP2D6 P10635 1/20 0.39
CYP19A1 P11511 1/20 0.39
SOAT1 P35610 1/20 0.36
ALDH1A1 P00352 2/20 0.36
TLR8 Q9NR97 1/20 0.36
CYP3A4 P08684 1/20 0.36
MAPK1 P28482 1/20 0.36
FGFR1 P11362 1/20 0.36
ABCB1 P08183 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL431558 0.98 LTA4H (0.47) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL2834685 0.92 LTA4H (0.47) LTA4HTSHRSOAT1ALDH1A1TLR8
SCHEMBL8665990 0.90 LTA4H (0.46) LTA4HTSHRSOAT1ALDH1A1TLR8
SCHEMBL11364614 0.90 LTA4H (0.46) LTA4HTSHRSOAT1ALDH1A1TLR8
SCHEMBL3701497 0.90 LTA4H (0.44) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL706124 0.88 LMNA (0.38) LTA4HSOAT1ALDH1A1TLR8
SCHEMBL106121 0.85 LMNA (0.39) LTA4HSOAT1ALDH1A1TLR8
SCHEMBL3876744 0.84 DRD2 (0.36) CYP2D6ALDH1A1TLR8CYP3A4
SCHEMBL708046 0.84 DUT (0.46) LTA4HCYP1A2CYP2C9CYP2C19TSHR
SCHEMBL61978 0.82 TLR8 (0.35) LTA4HCYP19A1TLR8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed