SCHEMBL708783

SCHEMBL708783

CCCc1ccccc1C(C)O[SiH3]

nearest known ligand 0.51

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ADRA2A P08913 4/20 0.51
ADRA2B P18089 4/20 0.51
ADRA2C P18825 4/20 0.51
HTR1A P08908 1/20 0.38
CYSLTR2 Q9NS75 7/20 0.34
CYSLTR1 Q9Y271 7/20 0.34
TSHR P16473 1/20 0.33
PPARG P37231 2/20 0.33
PPARA Q07869 2/20 0.33
GPR84 Q9NQS5 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706042 0.89 ADRA2A (0.43) ADRA2AADRA2BADRA2CCYSLTR2CYSLTR1
SCHEMBL3482119 0.88 CYSLTR2 (0.47) ADRA2AADRA2BADRA2CCYSLTR2CYSLTR1
SCHEMBL705287 0.85 MAPT (0.39) ADRA2AADRA2BADRA2CTSHR
SCHEMBL707032 0.84 ADRA2A (0.39) ADRA2AADRA2BADRA2CHTR1A
SCHEMBL19289830 0.83 ADRA2A (0.52) ADRA2AADRA2BADRA2CHTR1ACYSLTR2
SCHEMBL9716522 0.81 ADRA2A (0.36) ADRA2AADRA2BADRA2CCYSLTR2CYSLTR1
SCHEMBL3481497 0.80 ADRA2A (0.40) ADRA2AADRA2BADRA2CHTR1ACYSLTR2
SCHEMBL4843352 0.78 ADRA2A (0.46) ADRA2AADRA2BADRA2CHTR1ACYSLTR2
SCHEMBL9621039 0.78 ADRA2A (0.46) ADRA2AADRA2BADRA2CHTR1ACYSLTR2
SCHEMBL6699017 0.76 SLC6A2 (0.42) ADRA2AHTR1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed