Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADRA2A | P08913 | 2/20 | 0.39 |
| ▸ | ADRA2B | P18089 | 2/20 | 0.39 |
| ▸ | ADRA2C | P18825 | 2/20 | 0.39 |
| ▸ | HTR1A | P08908 | 1/20 | 0.33 |
| ▸ | DAO | P14920 | 1/20 | 0.32 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.32 |
| ▸ | GABRG2 | P18507 | 1/20 | 0.32 |
| ▸ | GABRB3 | P28472 | 1/20 | 0.32 |
| ▸ | ELANE | P08246 | 1/20 | 0.31 |
| ▸ | LTB4R | Q15722 | 1/20 | 0.31 |
| ▸ | LTB4R2 | Q9NPC1 | 1/20 | 0.31 |
| ▸ | F2RL1 | P55085 | 2/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL705823 | 0.87 | ALOX5 (0.36) | ADRA2AADRA2BADRA2C | |
| SCHEMBL708783 | 0.84 | ADRA2A (0.51) | ADRA2AADRA2BADRA2CHTR1A | |
| SCHEMBL708504 | 0.82 | ADRA2A (0.33) | ADRA2AADRA2BADRA2CELANELTB4R | |
| SCHEMBL706397 | 0.81 | ADRA2A (0.35) | ADRA2AADRA2BADRA2CELANE | |
| SCHEMBL19289770 | 0.80 | GABRA1 (0.50) | ADRA2AADRA2BADRA2CGABRA1GABRG2 | |
| SCHEMBL704243 | 0.79 | GABRA1 (0.36) | ADRA2AADRA2BADRA2CHTR1AGABRA1 | |
| SCHEMBL706042 | 0.75 | ADRA2A (0.43) | ADRA2AADRA2BADRA2C | |
| SCHEMBL3482119 | 0.73 | CYSLTR2 (0.47) | ADRA2AADRA2BADRA2C | |
| SCHEMBL1452942 | 0.73 | ALDH1A1 (0.41) | DAOGABRA1ELANELTB4RLTB4R2 | |
| SCHEMBL705287 | 0.73 | MAPT (0.39) | ADRA2AADRA2BADRA2CGABRA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115181223-B | Low-gloss matte auxiliary agent, preparation method thereof and molded body | 铨盛聚碳科技股份有限公司 | 2023-08-29 | — | — | CN | claimed |
| CN-115181223-A | Low-gloss matte auxiliary agent, preparation method thereof and formed body | 铨盛聚碳科技股份有限公司 | 2022-10-14 | — | — | CN | claimed |
| CN-115181223-B | Low-gloss matte auxiliary agent, preparation method thereof and molded body | 铨盛聚碳科技股份有限公司 | 2023-08-29 | — | — | CN | disclosed |
| CN-115181223-A | Low-gloss matte auxiliary agent, preparation method thereof and formed body | 铨盛聚碳科技股份有限公司 | 2022-10-14 | — | — | CN | disclosed |
| CN-114085382-A | Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof | 铨盛聚碳科技股份有限公司 | 2022-02-25 | — | — | CN | disclosed |
| US-9546237-B2 | Stabilization of polymers that contain a hydrolyzable functionality | BRIDGESTONE CORPORATION (JP) | 2017-01-17 | — | — | US | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20130331520-A1 | STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY | BRIDGESTONE CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |