Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | OPRM1 | P35372 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | DNM1 | Q05193 | 2/20 | 0.35 |
| ▸ | FDPS | P14324 | 4/20 | 0.33 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | THRB | P10828 | 1/20 | 0.33 |
| ▸ | ACE2 | Q9BYF1 | 1/20 | 0.33 |
| ▸ | GPR84 | Q9NQS5 | 3/20 | 0.32 |
| ▸ | SPHK1 | Q9NYA1 | 1/20 | 0.32 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.32 |
| ▸ | CA1 | P00915 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482064 | 0.92 | — | — | |
| SCHEMBL132565 | 0.87 | LMNA (0.42) | OPRM1LMNADNM1FDPSTSHR | |
| SCHEMBL11395225 | 0.87 | DNM1 (0.42) | OPRM1LMNADNM1FDPSTSHR | |
| SCHEMBL10893586 | 0.87 | LMNA (0.42) | OPRM1LMNADNM1FDPSTSHR | |
| SCHEMBL11396945 | 0.83 | LMNA (0.39) | OPRM1LMNADNM1FDPSTSHR | |
| SCHEMBL8906666 | 0.83 | TSHR (0.36) | TSHRALDH1A1 | |
| SCHEMBL708795 | 0.81 | DNM1 (0.39) | OPRM1LMNADNM1FDPSTSHR | |
| SCHEMBL11399407 | 0.77 | DNM1 (0.36) | LMNADNM1FDPSTSHRALDH1A1 | |
| SCHEMBL3481896 | 0.75 | LMNA (0.41) | OPRM1LMNAFDPSACE2GPR84 | |
| SCHEMBL28242986 | 0.73 | OPRM1 (0.42) | OPRM1LMNADNM1TSHRTHRB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |