Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL709017

O=S(=O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.O=S(=O)([O-])C(F)(F)F.c1ccc([S+]2CCCC2)cc1

nearest known ligand 0.33

Full drug profile on Sugi Atlas →

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
GPR3 P46089 1/20 0.33
CA1 P00915 8/20 0.32
CA2 P00918 8/20 0.32
MMP1 P03956 4/20 0.32
MMP2 P08253 4/20 0.32
MMP9 P14780 4/20 0.32
MMP8 P22894 4/20 0.32
MMP13 P45452 4/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2904052 0.88 CA1 (0.34) GPR3CA1CA2MMP1MMP2
Trifluoromethanesulfonic Acid SCHEMBL3627233 0.88 ALDH1A1 (0.32) GPR3
SCHEMBL2901807 0.87 CA2 (0.35) CA1CA2MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL36383 0.85 GPR3 (0.43) GPR3CA1CA2
Trifluoromethanesulfonic Acid SCHEMBL36325 0.83 GPR3 (0.42) GPR3CA1CA2
Trifluoromethanesulfonic Acid SCHEMBL3627231 0.80 ALDH1A1 (0.32)
Trifluoromethanesulfonic Acid SCHEMBL4307390 0.79 SLC2A1 (0.32)
Trifluoromethanesulfonic Acid SCHEMBL3627234 0.78 ALDH1A1 (0.34) GPR3CA1CA2
SCHEMBL2898445 0.77 CA1 (0.33) CA1CA2MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL3413691 0.77 GPR3 (0.37) GPR3CA1CA2MMP1MMP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9040220-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-26 US disclosed
US-8703387-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2014-04-22 US disclosed
US-8574809-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-05 US disclosed
US-20130017501-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-17 US disclosed
US-20120301829-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-11-29 US disclosed
US-8298745-B2 Polymeric compound, positive resist composition, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-30 US disclosed
US-20120214101-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-23 US disclosed
US-20120208128-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-16 US disclosed
US-20120164580-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-28 US disclosed
US-8124313-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-02-28 US disclosed
US-20100124718-A1 POLYMERIC COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESITS PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-20 US disclosed
US-20100121077-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-13 US disclosed
US-20100055606-A1 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. 2010-03-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100121077-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ABCC1, SLC11A2 GPR3 3631/4885CA1 306/4885CA2 582/4885
US-20120164580-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RER1, GLRA1, ASIC1 GPR3 1638/4885CA1 17/4885CA2 139/4885
US-20120301829-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR SCO2, ASIC1, NOX1 GPR3 1580/4885CA1 80/4885CA2 152/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.