Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 2/20 | 0.37 |
| ▸ | AR | P10275 | 1/20 | 0.31 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.31 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.31 |
| ▸ | NR1H3 | Q13133 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17937681 | 0.89 | LMNA (0.35) | ESR1 | |
| SCHEMBL15735584 | 0.89 | HTT (0.33) | ESR1NR1H2NR1H3 | |
| SCHEMBL17937731 | 0.89 | CYP2A6 (0.35) | ESR1 | |
| SCHEMBL534972 | 0.87 | CA4 (0.35) | ESR1ESR2 | |
| SCHEMBL15734164 | 0.87 | NR1H2 (0.41) | NR1H2NR1H3 | |
| SCHEMBL23493408 | 0.83 | MAPT (0.37) | ESR1 | |
| SCHEMBL15733845 | 0.83 | NPC1 (0.36) | ESR1 | |
| SCHEMBL2168495 | 0.83 | ALDH1A1 (0.42) | — | |
| SCHEMBL15736548 | 0.82 | KIF11 (0.48) | NR1H2NR1H3 | |
| SCHEMBL15737789 | 0.80 | ESR1 (0.31) | ESR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10995268-B2 | Etching composition effective to selectively wet etch a silicon nitride film | LTCAM CO., LTD. (KR) | 2021-05-04 | — | — | US | disclosed |
| CN-110551503-B | Composition for wet etching silicon nitride | LTCAM株式会社 | 2021-04-16 | — | — | CN | disclosed |
| CN-110551503-A | Composition for wet etching silicon nitride | LTCAM CO LTD | 2019-12-10 | — | — | CN | disclosed |
| EP-2586832-B1 | ENCAPSULANT FOR OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL SEMICONDUCTOR DEVICE USING SAME | SEKISUI CHEMICAL CO LTD (JP) | 2014-10-29 | — | — | EP | disclosed |
| US-8519429-B2 | Encapsulant for optical semiconductor device and optical semiconductor device using same | SEKISUI CHEMICAL CO., LTD. (JP) | 2013-08-27 | — | — | US | disclosed |
| EP-2586832-A1 | ENCAPSULANT FOR OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL SEMICONDUCTOR DEVICE USING SAME | Sekisui Chemical Co., Ltd. (JP) | 2013-05-01 | — | — | EP | disclosed |
| EP-2581954-A1 | DIE-BONDING MATERIAL FOR OPTICAL SEMICONDUCTOR DEVICES AND OPTICAL SEMICONDUCTOR DEVICE USING SAME | Sekisui Chemical Co., Ltd. (JP) | 2013-04-17 | — | — | EP | disclosed |
| EP-2554601-A1 | SEALANT FOR OPTICAL SEMICONDUCTORS AND OPTICAL SEMICONDUCTOR DEVICE | Sekisui Chemical Co., Ltd. (JP) | 2013-02-06 | — | — | EP | disclosed |
| US-20120153342-A1 | DIE-BONDING MATERIAL FOR OPTICAL SEMICONDUCTOR DEVICES AND OPTICAL SEMICONDUCTOR DEVICE USING SAME | SEKISUI CHEMICAL CO., LTD. (JP) | 2012-06-21 | — | — | US | disclosed |
| US-20120146088-A1 | ENCAPSULANT FOR OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL SEMICONDUCTOR DEVICE USING SAME | SEKISUI CHEMICAL CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120126282-A1 | SEALANT FOR OPTICAL SEMICONDUCTORS AND OPTICAL SEMICONDUCTOR DEVICE | SEKISUI CHEMICAL CO., LTD. (JP) | 2012-05-24 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |