SCHEMBL712409

SCHEMBL712409

Cc1ccc(S(=O)(=O)O)c(Cc2cccc([N+](=O)[O-])c2[N+](=O)[O-])c1

nearest known ligand 0.42

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.42
GPR35 Q9HC97 1/20 0.39
ACHE P22303 1/20 0.39
SMN1; SMN2 Q16637 2/20 0.38
CYP3A4 P08684 1/20 0.38
ALDH1A1 P00352 1/20 0.38
TDP1 Q9NUW8 2/20 0.36
MEN1 O00255 1/20 0.36
NFKBIA P25963 1/20 0.36
AGTR1 P30556 1/20 0.36
OPRK1 P41145 1/20 0.36
KMT2A Q03164 1/20 0.36
RELA Q04206 1/20 0.36
MCOLN3 Q8TDD5 1/20 0.36
CA12 O43570 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1228376 0.89 ACHE (0.46) TSHRACHESMN1; SMN2CYP3A4ALDH1A1
SCHEMBL196533 0.89 ACHE (0.46) TSHRACHESMN1; SMN2CYP3A4ALDH1A1
SCHEMBL1476156 0.86 TSHR (0.41) TSHRACHESMN1; SMN2CYP3A4ALDH1A1
SCHEMBL284469 0.86 TSHR (0.41) TSHRACHESMN1; SMN2CYP3A4ALDH1A1
SCHEMBL3841599 0.84 TDP1 (0.44) TSHRACHESMN1; SMN2CYP3A4ALDH1A1
SCHEMBL1453562 0.80 TSHR (0.43) TSHRGPR35ACHESMN1; SMN2CYP3A4
SCHEMBL1453554 0.80 TSHR (0.43) TSHRGPR35ACHESMN1; SMN2CYP3A4
SCHEMBL6005448 0.79 CYP1A2 (0.47) TSHRGPR35ACHESMN1; SMN2CYP3A4
SCHEMBL283800 0.79 CYP1A2 (0.47) TSHRGPR35ACHESMN1; SMN2CYP3A4
SCHEMBL30716894 0.78 AMY1A (0.44) TSHRSMN1; SMN2ALDH1A1TDP1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 270 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026107261-A1 PURIFICATION OF PHOTORESIST POLYMER BY SURFACE-MODIFIED POROUS POLYETHYLENE MEMBRANE ENTEGRIS, INC. (US) 2026-05-21 WO claimed
CN-113930151-A Anti-reflective coating composition containing self-crosslinkable mercaptomelamine polymer, preparation method thereof and pattern forming method 厦门恒坤新材料科技股份有限公司 2022-01-14 CN claimed
US-8906286-B2 Intraluminal prostheses having polymeric material with selectively modified crystallinity and methods of making same SYNECOR, LLC (US) 2014-12-09 US claimed
EP-1601524-B1 INTRALUMINAL PROSTHESES WITH ANNEALED POLYMER COATING SYNECOR LLC (US) 2014-11-19 EP claimed
EP-1637928-B1 Photoresist monomer having spiro cyclic ketal group, polymer thereof and photoresist composition including the same DONGJIN SEMICHEM CO LTD (KR) 2012-05-02 EP claimed
JP-4836779-B2 2011-12-14 JP claimed
US-7994050-B2 Method for forming dual damascene pattern HYNIX SEMICONDUCTOR INC. (KR) 2011-08-09 US claimed
US-20110169198-A1 Intraluminal Prostheses Having Polymeric Material with Selectively Modified Crystallinity and Methods of Making Same DESIMONE JOSEPH M 2011-07-14 US claimed
US-20100311239-A1 Method for forming dual damascene pattern LEE KI LYOUNG 2010-12-09 US claimed
EP-1736828-B1 Photoresist monomer, polymer thereof and photoresist composition including the same DONGJIN SEMICHEM CO LTD (KR) 2010-11-24 EP claimed
US-20030091927-A1 Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion HYNIX SEMICONDUCTOR INC. (KR) 2003-05-15 US claimed
US-20030022101-A1 Photoresist monomers, polymers thereof and photoresist compositions containing the same INTELLECTUAL DISCOVERY CO. LTD. (KR) 2003-01-30 US claimed
US-20030022100-A1 Photoresist monomers, polymers thereof and photoresist compositions containing the same HYNIX SEMICONDUCTOR INC. (KR) 2003-01-30 US claimed
US-20030013036-A1 Photoresist polymer and composition having nitro groups HYNIX SEMICONDUCTOR INC. (KR) 2003-01-16 US claimed
US-20030003379-A1 Photoresist monomers, polymers thereof and photoresist compositons containing the same HYNIX SEMICONDUCTOR INC. (KR) 2003-01-02 US claimed
US-6455226-B1 POLYMER FORMED BY POLYMERIZING MIXTURE OF NORBORNYLENE AND MALEIC ANHYDRIDE DERIVATIVE, REDUCING POLYMER WITH REDUCING AGENT, REACTING WITH HYDROXY PROTECTING GROUP PRECURSOR HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2002-09-24 US claimed
US-20020081504-A1 Pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator HYNIX SEMICONDUCTOR INC. (KR) 2002-06-27 US claimed
US-20020061466-A1 Photoresist monomer, polymer thereof and photoresist composition containing the same HYNIX SEMICONDUCTOR INC. (KR) 2002-05-23 US claimed
US-20020031721-A1 Photoresist composition for top-surface imaging processes by silylation HYNIX SEMICONDUCTOR INC. (KR) 2002-03-14 US claimed
US-20020018960-A1 Novel photoresist polymers, and photoresist compositions containing the same HYNIX SEMICONDUCTOR INC. (KR) 2002-02-14 US claimed