SCHEMBL713415

SCHEMBL713415

Cc1cccc([SiH2]OC(C)C)c1C

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TRPA1 O75762 1/20 0.35
ATM Q13315 1/20 0.35
ADRA2A P08913 4/20 0.34
ADRA2B P18089 4/20 0.34
ADRA2C P18825 4/20 0.34
CYP1A2 P05177 4/20 0.34
ADRA1A P35348 3/20 0.34
ADRA1B P35368 3/20 0.34
CYP3A4 P08684 3/20 0.34
CYP2D6 P10635 3/20 0.34
TSHR P16473 3/20 0.34
ADRA1D P25100 2/20 0.34
KCNH2 Q12809 2/20 0.34
CYP2C9 P11712 2/20 0.34
TP53 P04637 1/20 0.34
CYP2C19 P33261 1/20 0.34
SLC6A2 P23975 2/20 0.33
HTR7 P34969 1/20 0.33
SCN4A P35499 7/20 0.32
LMNA P02545 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11799546 0.85 TRPA1 (0.38) TRPA1ATMADRA2AADRA2BADRA2C
SCHEMBL706201 0.83 ACHE (0.38) CYP1A2CYP3A4CYP2D6TSHRKCNH2
SCHEMBL11802576 0.79 TRPA1 (0.33) TRPA1ATM
SCHEMBL5409861 0.79 TRPA1 (0.41) TRPA1ATMCYP1A2TSHRMAPT
SCHEMBL447683 0.79 TRPA1 (0.41) TRPA1ATMCYP1A2TSHRMAPT
SCHEMBL2961097 0.78 ALDH1A1 (0.32)
SCHEMBL18315768 0.77 TRPA1 (0.39) TRPA1ATMCYP1A2CYP3A4CYP2D6
SCHEMBL1639607 0.77
SCHEMBL11809799 0.77 TRPA1 (0.34) TRPA1ATMCYP3A4CYP2D6TSHR
SCHEMBL1315377 0.75 NPC1 (0.32) ADRA2AADRA2BADRA2CCYP1A2CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed