SCHEMBL714783

SCHEMBL714783

CC(C)O[Si](c1ccccc1)(C(C)(C)C)C(C)(C)C

nearest known ligand 0.34

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 1/20 0.34
MAPK1 P28482 1/20 0.32
ALDH1A1 P00352 2/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
ALOX15 P16050 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704808 0.89
SCHEMBL708033 0.79 MAPK1 (0.32) RIPK1MAPK1ALDH1A1L3MBTL1ALOX15
SCHEMBL705925 0.79 RIPK1 (0.34) RIPK1MAPK1ALDH1A1L3MBTL1ALOX15
SCHEMBL1313796 0.78 ESR1 (0.32) MAPK1ALDH1A1L3MBTL1
SCHEMBL702695 0.76 MAPK1 (0.36) MAPK1ALDH1A1ALOX15
SCHEMBL705719 0.74 MAPK1 (0.34) MAPK1ALDH1A1ALOX15
SCHEMBL708488 0.73 ALDH1A1 (0.35) MAPK1ALDH1A1L3MBTL1
SCHEMBL106516 0.73 TSHR (0.36) ALDH1A1L3MBTL1
SCHEMBL705272 0.73 ESR1 (0.38) ALDH1A1L3MBTL1
SCHEMBL106923 0.73 TDP1 (0.37) ALDH1A1L3MBTL1ALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed