⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31257102 | 0.79 | — | — | |
| SCHEMBL6397085 | 0.67 | — | — | |
| SCHEMBL1614941 | 0.65 | — | — | |
| SCHEMBL6300049 | 0.61 | ABCB11 (0.30) | — | |
| SCHEMBL16633188 | 0.58 | ALDH1A1 (0.30) | — | |
| SCHEMBL30396258 | 0.57 | — | — | |
| SCHEMBL4373736 | 0.57 | ABCB11 (0.30) | — | |
| SCHEMBL31257101 | 0.57 | — | — | |
| SCHEMBL43362 | 0.56 | — | — | |
| SCHEMBL9032470 | 0.55 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 154 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240093357-A1 | Semiconductor Device, Method and Machine of Manufacture | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-03-21 | — | — | US | claimed |
| US-11908697-B2 | Interconnect structure having a carbon-containing barrier layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2024-02-20 | — | — | US | claimed |
| US-20230107176-A1 | Interconnect Structure Having a Carbon-Containing Barrier Layer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-04-06 | — | — | US | claimed |
| CN-114038608-B | Low-resistivity solar cell conductive paste | 西安宏星电子浆料科技股份有限公司 | 2022-04-19 | — | — | CN | claimed |
| CN-114038608-A | Low-resistivity solar cell conductive paste | 西安宏星电子浆料科技股份有限公司 | 2022-02-11 | — | — | CN | claimed |
| US-20210343535-A1 | Interconnect Structure Having a Carbon-Containing Barrier Layer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-11-04 | — | — | US | claimed |
| US-20210066080-A1 | METHODS AND APPARATUS FOR DEPOSITING A CHALCOGENIDE FILM AND STRUCTURES INCLUDING THE FILM | ASM IP HOLDING B.V. (NL) | 2021-03-04 | — | — | US | claimed |
| US-20150364537-A1 | ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS | ATMI KOREA CO., LTD (KR) | 2015-12-17 | — | — | US | claimed |
| US-20150102070-A1 | CONTAINER FOR HANDLING AND TRANSPORTING OF HIGH-PURITY AND ULTRA-HIGH-PURITY CHEMICALS | EVONIK DEGUSSA GMBH (DE) | 2015-04-16 | — | — | US | claimed |
| US-20140080283-A1 | INTERFACIAL MATERIALS FOR USE IN SEMICONDUCTOR STRUCTURES AND RELATED METHODS | MICRON TECHNOLOGY, INC. (US) | 2014-03-20 | — | — | US | claimed |
| US-7456101-B1 | Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds | NOVELLUS SYSTEMS, INC. (US) | 2008-11-25 | — | — | US | claimed |
| US-7211509-B1 | Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds | NOVELLUS SYSTEMS, INC, (US) | 2007-05-01 | — | — | US | claimed |
| US-6939801-B2 | Selective deposition of a barrier layer on a dielectric material | APPLIED MATERIALS, INC. (US) | 2005-09-06 | — | — | US | claimed |
| EP-1459369-A2 | SELECTIVE DEPOSITION OF A BARRIER LAYER ON A DIELECTRIC MATERIAL | Applied Materials, Inc. (US) | 2004-09-22 | — | — | EP | claimed |
| US-20030224578-A1 | Selective deposition of a barrier layer on a dielectric material | APPLIED MATERIALS, INC. | 2003-12-04 | — | — | US | claimed |
| WO-2003056619-A2 | SELECTIVE DEPOSITION OF A BARRIER LAYER ON A DIELECTRIC MATERIAL | APPLIED MATERIALS, INC. (US) | 2003-07-10 | — | — | WO | claimed |
| WO-2024097903-A1 | PROTECTION TREATMENTS FOR SURFACES OF SEMICONDUCTOR FABRICATION EQUIPMENT | APPLIED MATERIALS, INC. (US) | 2024-05-10 | — | — | WO | disclosed |
| US-20240153745-A1 | PROTECTION TREATMENTS FOR SURFACES OF SEMICONDUCTOR FABRICATION EQUIPMENT | APPLIED MATERIALS, INC. | 2024-05-09 | — | — | US | disclosed |
| US-20030224578-A1 | Selective deposition of a barrier layer on a dielectric material | APPLIED MATERIALS, INC. | 2003-12-04 | — | — | US | disclosed |
| WO-2003056619-A2 | SELECTIVE DEPOSITION OF A BARRIER LAYER ON A DIELECTRIC MATERIAL | APPLIED MATERIALS, INC. (US) | 2003-07-10 | — | — | WO | disclosed |