SCHEMBL7519092

SCHEMBL7519092

Cc1cc(C)c(S(=O)(=O)ON2C(=O)C=CC2=O)c(C)c1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 6/20 0.43
KDM4E B2RXH2 4/20 0.43
HPGD P15428 3/20 0.43
XBP1 P17861 2/20 0.43
NPSR1 Q6W5P4 2/20 0.43
CYP1A2 P05177 1/20 0.43
CYP3A4 P08684 1/20 0.43
CYP2C19 P33261 1/20 0.43
F2 P00734 5/20 0.41
ALDH1A1 P00352 4/20 0.41
CA1 P00915 1/20 0.39
CA2 P00918 1/20 0.39
MMP1 P03956 1/20 0.39
MMP2 P08253 1/20 0.39
MMP9 P14780 1/20 0.39
MMP8 P22894 1/20 0.39
MMP13 P45452 1/20 0.39
RAPGEF4 Q8WZA2 6/20 0.39
GAA P10253 2/20 0.38
KMT2A Q03164 5/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5556202 0.82 KDM4E (0.50) MAPTKDM4EHPGDXBP1NPSR1
SCHEMBL4835204 0.81 MAPT (0.42) MAPTKDM4EHPGDXBP1NPSR1
SCHEMBL65774 0.81 PARL (0.50) MAPTKDM4EHPGDXBP1NPSR1
SCHEMBL5557975 0.77 KDM4E (0.73) MAPTKDM4EHPGDXBP1NPSR1
SCHEMBL29761819 0.77 KDM4E (0.73) MAPTKDM4EHPGDXBP1NPSR1
SCHEMBL11892773 0.77 KDM4E (0.46) MAPTKDM4EHPGDXBP1NPSR1
SCHEMBL4835081 0.77 MAPT (0.39) MAPTKDM4EHPGDXBP1NPSR1
SCHEMBL4834877 0.76 MAPT (0.38) MAPTKDM4EHPGDXBP1NPSR1
SCHEMBL5555746 0.74 GAA (0.39) MAPTKDM4EHPGDXBP1NPSR1
SCHEMBL4829968 0.74 CA1 (0.38) MAPTKDM4EHPGDXBP1NPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120044752-A Photosensitive resin composition 东京应化工业株式会社 2025-05-27 CN disclosed
US-20240302743-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2024-09-12 US disclosed
CN-116583784-A Resist composition and resist pattern forming method 东京应化工业株式会社 2023-08-11 CN disclosed
WO-2022138648-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2022-06-30 WO disclosed
EP-0848289-B1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2002-02-27 EP disclosed
US-5928837-A Negative-working chemical-sensitization photoresist composition comprising oxime sulfonate compounds TOKYO OHKA KOGYO CO., LTD. (JP) 1999-07-27 US disclosed
EP-0848289-A1 Negative-working chemical sensitization photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-06-17 EP disclosed