SCHEMBL766027

SCHEMBL766027

Cc1cc(O)c(/C=C/C(=O)N2CCCCC2)cc1N=O

nearest known ligand 0.50

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
PELI1 Q96FA3 3/20 0.50
ALOX5 P09917 2/20 0.47
TRPV1 Q8NER1 2/20 0.45
MAOB P27338 1/20 0.45
HPGD P15428 3/20 0.43
ALDH1A1 P00352 7/20 0.41
MAPT P10636 4/20 0.41
SMN1; SMN2 Q16637 3/20 0.41
KMT2A Q03164 3/20 0.41
NPC1 O15118 3/20 0.41
RAB9A P51151 3/20 0.41
MEN1 O00255 2/20 0.41
KDM4E B2RXH2 2/20 0.40
L3MBTL1 Q9Y468 2/20 0.39
POLB P06746 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL766033 0.86 PELI1 (0.56) PELI1ALOX5TRPV1MAOBHPGD
SCHEMBL10446033 0.85 PELI1 (0.63) PELI1ALOX5TRPV1MAOBHPGD
SCHEMBL13087237 0.82 PELI1 (0.60) PELI1ALOX5TRPV1MAOBHPGD
SCHEMBL10446515 0.81 PELI1 (0.59) PELI1ALOX5TRPV1MAOBHPGD
SCHEMBL10446290 0.80 PELI1 (0.62) PELI1ALOX5TRPV1MAOBHPGD
SCHEMBL10445997 0.79 PELI1 (0.58) PELI1ALOX5TRPV1MAOBHPGD
SCHEMBL766065 0.78 HPGD (0.41) PELI1ALOX5TRPV1MAOBHPGD
SCHEMBL766014 0.76 MAPT (0.55) PELI1ALOX5TRPV1MAOBHPGD
SCHEMBL10227975 0.75 TRPV1 (0.64) PELI1TRPV1MAOBHPGDALDH1A1
SCHEMBL10446562 0.74 PELI1 (0.59) PELI1ALOX5TRPV1MAOBHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9494866-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 US disclosed
US-9411224-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-08-09 US disclosed
US-9411224-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-08-09 US disclosed
US-9405200-B2 Resist composition and method of forming resist pattern TOYKO OHKA KOGYO CO., LTD. (JP) 2016-08-02 US disclosed
US-9405200-B2 Resist composition and method of forming resist pattern TOYKO OHKA KOGYO CO., LTD. (JP) 2016-08-02 US disclosed
US-9377685-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-06-28 US disclosed
US-9377685-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-06-28 US disclosed
US-20150147702-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2015-05-28 US disclosed
US-20150147702-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2015-05-28 US disclosed
US-9029070-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD (JP) 2015-05-12 US disclosed
US-20130115555-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-09 US disclosed
US-20130084523-A1 RESIST COMPOSITIOIN AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084523-A1 RESIST COMPOSITIOIN AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-04 US disclosed
US-20130078572-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-28 US disclosed
US-20130078572-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-28 US disclosed
US-20130017500-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-17 US disclosed
US-20130017500-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-17 US disclosed
US-20120070781-A1 BASE GENERATOR, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING MATERIAL COMPRISING THE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE RESIN COMPOSITION AND PRODUCTS COMPRISING THE SAME DAI NIPPON PRINTING CO., LTD. (JP) 2012-03-22 US disclosed
US-20120070781-A1 BASE GENERATOR, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING MATERIAL COMPRISING THE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE RESIN COMPOSITION AND PRODUCTS COMPRISING THE SAME DAI NIPPON PRINTING CO., LTD. (JP) 2012-03-22 US disclosed
WO-2010113813-A1 BASE-GENERATING AGENT, PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING MATERIAL COMPRISING THE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD AND ARTICLE USING THE PHOTOSENSITIVE RESIN COMPOSITION 大日本印刷株式会社 (JP) 2010-10-07 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120070781-A1 BASE GENERATOR, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING MATERIAL COMPRISING THE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE RESIN COMPOSITION AND PRODUCTS COMPRISING THE SAME RER1, SUN2, REV1 PELI1 585/4885ALOX5 1814/4885TRPV1 536/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.