SCHEMBL785883

SCHEMBL785883

CCC(C)(C)C(=O)OC(C)OC(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL47419 0.82 MMP8 (0.30)
SCHEMBL2735474 0.80 TSHR (0.30)
SCHEMBL14258803 0.80 MMP8 (0.33)
SCHEMBL47442 0.80 LMNA (0.42)
SCHEMBL132911 0.79 TSHR (0.40)
SCHEMBL13303725 0.79 PRKCA (0.39)
SCHEMBL11965849 0.77
SCHEMBL15697302 0.77 MMP8 (0.31)
SCHEMBL2735478 0.77 GRM1 (0.31)
SCHEMBL15362564 0.77 TSHR (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9746771-B2 Laminate body FUJIFILM CORPORATION (JP) 2017-08-29 US disclosed
US-20160170303-A1 LAMINATE BODY FUJIFILM CORPORATION (JP) 2016-06-16 US disclosed
US-20150086912-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-03-26 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8709701-B2 Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-04-29 US disclosed
US-8481247-B2 Resist underlayer film forming composition containing liquid additive NISSAN CHEMICAL INDUSTRIES, LTD. 2013-07-09 US disclosed
US-8211615-B2 Copolymer for immersion lithography and compositions MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-07-03 US disclosed
US-20120071638-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-03-22 US disclosed
US-8067516-B2 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-11-29 US disclosed
US-20110207331-A1 Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-08-25 US disclosed
US-20100062371-A1 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-03-11 US disclosed
US-20100047710-A1 COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-02-25 US disclosed
US-20100022090-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY, CONTAINING AROMATIC FUSED RING-CONTAINING RESIN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-01-28 US disclosed
US-20090311624-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LIQUID ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-17 US disclosed
US-20080102649-A1 Underlayer Coating Forming Composition For Lythography Containing Compound Having Protected Carboxyl Group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-05-01 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-7226721-B2 Underlayer coating forming composition for lithography containing compound having protected carboxyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-06-05 US disclosed