SCHEMBL785889

SCHEMBL785889

CCC(C)C(=O)OC1CCCCO1

nearest known ligand 0.37

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
HTT P42858 1/20 0.36
MEN1 O00255 2/20 0.35
KMT2A Q03164 2/20 0.35
SLC6A3 Q01959 2/20 0.34
HPGD P15428 1/20 0.33
TSHR P16473 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
EPHX2 P34913 2/20 0.33
CHRNB4 P30926 1/20 0.33
CHRNA3 P32297 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL786034 0.95 HTT (0.39) HTTMEN1KMT2AHPGDTSHR
SCHEMBL17736519 0.87 HTT (0.33) HTTMEN1KMT2ASLC6A3HPGD
SCHEMBL19286008 0.86 MEN1 (0.34) HTTMEN1KMT2ASLC6A3HPGD
SCHEMBL10799911 0.83 SLC6A3 (0.37) HTTMEN1KMT2ASLC6A3HPGD
SCHEMBL11931641 0.83 SLC6A3 (0.37) HTTMEN1KMT2ASLC6A3HPGD
SCHEMBL14640917 0.83 SLC6A3 (0.37) HTTMEN1KMT2ASLC6A3HPGD
SCHEMBL10957531 0.81 SLC6A3 (0.36) MEN1KMT2ASLC6A3HPGDTSHR
SCHEMBL10807859 0.81 SLC6A3 (0.36) HTTMEN1KMT2ASLC6A3HPGD
SCHEMBL13918183 0.80 SLC6A3 (0.35) MEN1KMT2ASLC6A3HPGDTSHR
SCHEMBL21443884 0.79 HTT (0.38) HTTMEN1KMT2AHPGDTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10023540-B2 Hydrogen barrier agent, hydrogen barrier film forming composition, hydrogen barrier film, method for producing hydrogen barrier film, and electronic element TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-17 US disclosed
US-9994538-B2 Latent acids and their use BASF SE (DE) 2018-06-12 US disclosed
US-9981914-B2 2018-05-29 US disclosed
US-20180086717-A1 HYDROGEN BARRIER AGENT, HYDROGEN BARRIER FILM FORMING COMPOSITION, HYDROGEN BARRIER FILM, METHOD FOR PRODUCING HYDROGEN BARRIER FILM, AND ELECTRONIC ELEMENT TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-29 US disclosed
US-20180009775-A1 LATENT ACIDS AND THEIR USE BASF SE (DE) 2018-01-11 US disclosed
US-9746771-B2 Laminate body FUJIFILM CORPORATION (JP) 2017-08-29 US disclosed
US-20170242338-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-08-24 US disclosed
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 US disclosed
US-20160170303-A1 LAMINATE BODY FUJIFILM CORPORATION (JP) 2016-06-16 US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 US disclosed
US-8067516-B2 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-11-29 US disclosed
US-7960494-B2 Copolymer for semiconductor lithography and process for producing the same MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-06-14 US disclosed
US-20100143842-A1 METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY MARUZEN PETROCHEMICAL CO., LTD. (JP) 2010-06-10 US disclosed
US-20100062371-A1 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-03-11 US disclosed
US-20100047710-A1 COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-02-25 US disclosed
US-20090306328-A1 COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME MARUZEN PETROCHEMICAL CO., LTD. (JP) 2009-12-10 US disclosed
US-7504193-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2009-03-17 US disclosed
US-7419758-B2 Lithographic printing plate precursor and lithographic printing method FUJIFILM CORPORATION (JP) 2008-09-02 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-7157208-B2 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180009775-A1 LATENT ACIDS AND THEIR USE LTA, C1S, C9 HTT 4207/4885MEN1 4625/4885KMT2A 2445/4885
US-20180086717-A1 HYDROGEN BARRIER AGENT, HYDROGEN BARRIER FILM FORMING COMPOSITION, HYDROGEN BARRIER FILM, METHOD FOR PRODUCING HYDROGEN BARRIER FILM, AND ELECTRONIC ELEMENT SLC9A2, SLC9A1, NHERF1 HTT 311/4885MEN1 626/4885KMT2A 1420/4885
US-10023540-B2 Hydrogen barrier agent, hydrogen barrier film forming composition, hydrogen barrier film, method for producing hydrogen barrier film, and electronic element SLC9A2, SLC9A1, NHERF1 HTT 311/4885MEN1 626/4885KMT2A 1420/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.