Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.41 |
| ▸ | NPC1 | O15118 | 2/20 | 0.38 |
| ▸ | RAB9A | P51151 | 2/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
| ▸ | HPGD | P15428 | 4/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.37 |
| ▸ | GFER | P55789 | 1/20 | 0.37 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.36 |
| ▸ | KCNQ3 | O43525 | 1/20 | 0.34 |
| ▸ | KCNQ2 | O43526 | 1/20 | 0.34 |
| ▸ | KCNQ4 | P56696 | 1/20 | 0.34 |
| ▸ | KCNQ5 | Q9NR82 | 1/20 | 0.34 |
| ▸ | LMNA | P02545 | 2/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2065143 | 0.82 | POLB (0.46) | POLBHSD11B1NPC1RAB9AMEN1 | |
| SCHEMBL23827198 | 0.81 | POLB (0.44) | POLBHSD11B1NPC1RAB9AMEN1 | |
| SCHEMBL14502529 | 0.80 | HSD11B1 (0.32) | POLBHSD11B1NPC1RAB9AMEN1 | |
| SCHEMBL12190135 | 0.78 | NPC1 (0.37) | POLBHSD11B1NPC1RAB9AMEN1 | |
| SCHEMBL17281548 | 0.78 | POLB (0.42) | POLBHSD11B1NPC1RAB9AMEN1 | |
| SCHEMBL31178057 | 0.77 | POLB (0.49) | POLBHSD11B1NPC1RAB9AMEN1 | |
| SCHEMBL1862636 | 0.77 | POLB (0.49) | POLBHSD11B1NPC1RAB9AMEN1 | |
| Hydrochloric Acid SCHEMBL4279690 | 0.76 | POLB (0.47) | POLBHSD11B1NPC1RAB9AMEN1 | |
| SCHEMBL785984 | 0.75 | POLB (0.39) | POLBHSD11B1NPC1RAB9AMEN1 | |
| SCHEMBL14593937 | 0.75 | LMNA (0.34) | LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20220155688-A1 | ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-05-19 | — | — | US | disclosed |
| US-20200225584-A1 | ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2020-07-16 | — | — | US | disclosed |
| US-20200041906-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CARBONYL STRUCTURE | NISSAN CHEMICAL CORPORATION (JP) | 2020-02-06 | — | — | US | disclosed |
| US-10372039-B2 | Resist underlayer film forming composition containing silicon having ester group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-08-06 | — | — | US | disclosed |
| US-9546133-B2 | Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2017-01-17 | — | — | US | disclosed |
| US-9290623-B2 | Composition for forming silicon-containing resist underlayer film having cyclic diester group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9290623-B2 | Composition for forming silicon-containing resist underlayer film having cyclic diester group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-03-22 | — | — | US | disclosed |
| US-20160023992-A1 | METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER | MARUZEN PETROCHEMICAL CO., LTD. | 2016-01-28 | — | — | US | disclosed |
| US-9216948-B2 | Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2015-12-22 | — | — | US | disclosed |
| US-20100143842-A1 | METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100143842-A1 | METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100062371-A1 | Copolymer and composition for semiconductor lithography and process for producing the copolymer | MARUZEN PETROCHEMICAL CO., LTD (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062371-A1 | Copolymer and composition for semiconductor lithography and process for producing the copolymer | MARUZEN PETROCHEMICAL CO., LTD (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100048848-A1 | PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20100048848-A1 | PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20100047710-A1 | COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS | MARUZEN PETROCHEMICAL CO., LTD (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20090306328-A1 | COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2009-12-10 | — | — | US | disclosed |
| US-20070269741-A1 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2007-11-22 | — | — | US | disclosed |
| US-20070269741-A1 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2007-11-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160023992-A1 | METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER | ORAI1, STOM, SORT1 | POLB 60/4885HSD11B1 3849/4885NPC1 1947/4885 |
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | HAAO, HPD, IL4 | POLB 1617/4885HSD11B1 9/4885NPC1 3019/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.