Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12430040 | 0.92 | FKBP1A (0.30) | FKBP1A | |
| SCHEMBL17370197 | 0.87 | CYP3A4 (0.30) | SMN1; SMN2 | |
| SCHEMBL441712 | 0.87 | SMN1; SMN2 (0.34) | SMN1; SMN2 | |
| SCHEMBL12430036 | 0.87 | — | — | |
| SCHEMBL12430052 | 0.85 | — | — | |
| SCHEMBL14877467 | 0.85 | — | — | |
| SCHEMBL686101 | 0.85 | SMN1; SMN2 (0.31) | SMN1; SMN2 | |
| SCHEMBL879056 | 0.80 | — | — | |
| SCHEMBL10061831 | 0.80 | ALOX15 (0.35) | SMN1; SMN2 | |
| SCHEMBL25457084 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8859180-B2 | Copolymer and composition for semiconductor lithography and process for producing the copolymer | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8859180-B2 | Copolymer and composition for semiconductor lithography and process for producing the copolymer | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8377625-B2 | Method for producing a copolymer solution with a uniform concentration for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2013-02-19 | — | — | US | disclosed |
| US-8211615-B2 | Copolymer for immersion lithography and compositions | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2012-07-03 | — | — | US | disclosed |
| US-20120071638-A1 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2012-03-22 | — | — | US | disclosed |
| US-8067516-B2 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2011-11-29 | — | — | US | disclosed |
| US-7998654-B2 | Positive resist composition and pattern-forming method | FUJIFILM CORPORATION (JP) | 2011-08-16 | — | — | US | disclosed |
| US-7977029-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-07-12 | — | — | US | disclosed |
| US-7960494-B2 | Copolymer for semiconductor lithography and process for producing the same | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2011-06-14 | — | — | US | disclosed |
| US-7914965-B2 | Resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2011-03-29 | — | — | US | disclosed |
| US-7252924-B2 | Positive resist composition and method of pattern formation using the same | FUJIFILM CORPORATION (JP) | 2007-08-07 | — | — | US | disclosed |
| US-7241551-B2 | Positive-working resist composition | FUJIFILM CORPORATION (JP) | 2007-07-10 | — | — | US | disclosed |
| US-7235341-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-26 | — | — | US | disclosed |
| US-20070141513-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-06-21 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214733-B2 | Positive type resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120071638-A1 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | FRG1, H1-10, POLL | FKBP1A 2330/4885SMN1; SMN2 3508/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.