SCHEMBL785965

SCHEMBL785965

CCC(C)(C)C(=O)OC1CCC2(C)CC1OC2=O

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 3/20 0.33
USP2 O75604 2/20 0.33
ALDH1A1 P00352 2/20 0.33
HMGCR P04035 2/20 0.33
TSHR P16473 2/20 0.33
KDM4E B2RXH2 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
NR1I2 O75469 1/20 0.33
ABCB11 O95342 1/20 0.33
NR3C1 P04150 1/20 0.33
PGR P06401 1/20 0.33
ABCB1 P08183 1/20 0.33
ADORA3 P0DMS8 1/20 0.33
CYP2C8 P10632 1/20 0.33
CHRM1 P11229 1/20 0.33
ADRB3 P13945 1/20 0.33
GABRA1 P14867 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA2C P18825 1/20 0.33
DRD1 P21728 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17549988 0.88
SCHEMBL14616499 0.83 CYP3A4 (0.32) CYP3A4USP2ALDH1A1HMGCRTSHR
SCHEMBL12753415 0.81 CYP3A4 (0.34) CYP3A4USP2ALDH1A1HMGCRTSHR
SCHEMBL786078 0.77 HMGCR (0.37) CYP3A4ALDH1A1HMGCRTSHRSMN1; SMN2
SCHEMBL12190160 0.75 OPRM1 (0.32) OPRM1OPRK1
SCHEMBL18253500 0.74
SCHEMBL12753426 0.72
SCHEMBL111509 0.71 CYP3A4 (0.36) CYP3A4USP2ALDH1A1HMGCRTSHR
SCHEMBL13359161 0.71 CYP3A4 (0.33) CYP3A4USP2ALDH1A1HMGCRTSHR
SCHEMBL12753416 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20230137472-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-9546133-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2017-01-17 US disclosed
US-20160023992-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER MARUZEN PETROCHEMICAL CO., LTD. 2016-01-28 US disclosed
US-9216948-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2015-12-22 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8759462-B2 Method for producing resist copolymer having low molecular weight MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-06-24 US disclosed
US-20130123446-A1 METHOD FOR PRODUCING RESIST COPOLYMER HAVING LOW MOLECULAR WEIGHT MARUZEN PETROCHEMICAL CO., LTD. (JP) 2013-05-16 US disclosed
US-8377625-B2 Method for producing a copolymer solution with a uniform concentration for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2013-02-19 US disclosed
US-20120271020-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-10-25 US disclosed
US-8211615-B2 Copolymer for immersion lithography and compositions MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-07-03 US disclosed
US-20120071638-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-03-22 US disclosed
US-8067516-B2 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-11-29 US disclosed
US-7960494-B2 Copolymer for semiconductor lithography and process for producing the same MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-06-14 US disclosed
US-20100143842-A1 METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY MARUZEN PETROCHEMICAL CO., LTD. (JP) 2010-06-10 US disclosed
US-20100062371-A1 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-03-11 US disclosed
US-20100047710-A1 COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-02-25 US disclosed
US-20090306328-A1 COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME MARUZEN PETROCHEMICAL CO., LTD. (JP) 2009-12-10 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120271020-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER ORAI1, STOM, SORT1 CYP3A4 2685/4885USP2 3221/4885ALDH1A1 4817/4885
US-20120071638-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography FRG1, H1-10, POLL CYP3A4 4153/4885USP2 1668/4885ALDH1A1 3739/4885
US-20160023992-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER ORAI1, STOM, SORT1 CYP3A4 2685/4885USP2 3221/4885ALDH1A1 4817/4885
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER HAAO, HPD, IL4 CYP3A4 111/4885USP2 1614/4885ALDH1A1 432/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.