SCHEMBL795385

SCHEMBL795385

CC(C)(C)OC(=O)Oc1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.58

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ELANE P08246 9/20 0.58
KDM1A O60341 1/20 0.44
MAPT P10636 3/20 0.41
L3MBTL1 Q9Y468 2/20 0.41
TDP1 Q9NUW8 1/20 0.41
ALDH1A1 P00352 2/20 0.39
HSP90AA1 P07900 1/20 0.39
GAA P10253 1/20 0.39
MEN1 O00255 3/20 0.39
KMT2A Q03164 3/20 0.39
CA2 P00918 1/20 0.38
ATM Q13315 1/20 0.37
NPSR1 Q6W5P4 2/20 0.37
RAB9A P51151 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8322043 1.00 ELANE (0.58) ELANEKDM1AMAPTL3MBTL1TDP1
SCHEMBL8323108 0.93 ELANE (0.66) ELANEKDM1AMAPTMEN1KMT2A
SCHEMBL8323468 0.93 ELANE (0.51) ELANEKDM1AMAPTL3MBTL1TDP1
SCHEMBL10589902 0.90 ELANE (0.49) ELANEKDM1AMAPTL3MBTL1TDP1
Trifluoromethanesulfonic Acid SCHEMBL7122594 0.88 ELANE (0.47) ELANEKDM1AMAPTL3MBTL1TDP1
SCHEMBL9658092 0.87 ELANE (0.58) ELANEKDM1AMAPTALDH1A1MEN1
SCHEMBL795409 0.87 ELANE (0.46) ELANEKDM1AL3MBTL1ALDH1A1CA2
SCHEMBL13131239 0.86 ELANE (0.46) ELANEKDM1AMAPTL3MBTL1TDP1
SCHEMBL8322200 0.86 ELANE (0.46) ELANEKDM1AMAPTL3MBTL1TDP1
SCHEMBL3695509 0.86 ELANE (0.45) ELANEKDM1AMAPTALDH1A1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 72 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230133710-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-20230133710-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-20230038825-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK FUJIFILM CORPORATION (JP) 2023-02-09 US disclosed
US-20220206386-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2022-06-30 US disclosed
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-04-28 US disclosed
US-20210188770-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-06-24 US disclosed
US-20210179554-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-06-17 US disclosed
US-10824073-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2020-11-03 US disclosed
US-10809616-B2 Cholate photoacid generators and photoresists comprising same ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-10-20 US disclosed
US-20170285470-A1 CHOLATE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-10-05 US disclosed
US-7465528-B2 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-12-16 US disclosed
US-7341817-B2 Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2008-03-11 US disclosed
US-20070087288-A1 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION 2007-04-19 US disclosed
US-20070054214-A1 Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions JSR CORPORATION (JP) 2007-03-08 US disclosed
EP-1059314-B1 A resist composition WAKO PURE CHEM IND LTD (JP) 2004-12-22 EP disclosed
US-6716573-B2 Resist Composition WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2004-04-06 US disclosed
US-20030039920-A1 Resist composition WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2003-02-27 US disclosed
US-6432608-B1 FINENESS PATTERN WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2002-08-13 US disclosed
EP-1059314-A1 A resist composition Wako Pure Chemical Industries, Ltd. (JP) 2000-12-13 EP disclosed
US-5880169-A HAVING HIGH RESOLUTION FOR FINE PATTERNING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170285470-A1 CHOLATE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME GGCT, LCAT, SLC7A11 ELANE 4143/4885KDM1A 3302/4885MAPT 465/4885
US-10809616-B2 Cholate photoacid generators and photoresists comprising same GGCT, LCAT, SLC7A11 ELANE 4143/4885KDM1A 3302/4885MAPT 465/4885
US-20210179554-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SLC6A5, LIFR, SLC6A9 ELANE 2738/4885KDM1A 2489/4885MAPT 2273/4885
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS CACNA1F, SLC6A5, IDUA ELANE 3192/4885KDM1A 2109/4885MAPT 2279/4885
US-20210188770-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SLC6A5, LIFR, SLC6A9 ELANE 2738/4885KDM1A 2489/4885MAPT 2273/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.