SCHEMBL795440

SCHEMBL795440

Clc1cccc2c1[I+]c1ccccc1-2

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GPR3 P46089 14/20 0.54
CYBB P04839 2/20 0.54
NOX5 Q96PH1 2/20 0.54
NOX4 Q9NPH5 2/20 0.54
NOX1 Q9Y5S8 2/20 0.54
TSHR P16473 2/20 0.54
NPC1 O15118 2/20 0.54
TP53 P04637 2/20 0.54
CYP1A2 P05177 2/20 0.54
SMN1; SMN2 Q16637 2/20 0.54
MEN1 O00255 1/20 0.54
ALDH1A1 P00352 1/20 0.54
CYP3A4 P08684 1/20 0.54
CYP2D6 P10635 1/20 0.54
CYP2C9 P11712 1/20 0.54
MAPK1 P28482 1/20 0.54
CYP2C19 P33261 1/20 0.54
THPO P40225 1/20 0.54
STAT6 P42226 1/20 0.54
MTOR P42345 1/20 0.54

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Diphenyleneiodonium SCHEMBL219548 0.72 GPR3 (1.00) GPR3CYBBNOX5NOX4NOX1
Diphenyleneiodonium SCHEMBL29486373 0.72 GPR3 (1.00) GPR3CYBBNOX5NOX4NOX1
Diphenyleneiodonium SCHEMBL10834144 0.70 GPR3 (0.93) GPR3CYBBNOX5NOX4NOX1
Diphenyleneiodonium SCHEMBL159318 0.70 GPR3 (1.00) GPR3CYBBNOX5NOX4NOX1
Diphenyleneiodonium SCHEMBL30150802 0.70 GPR3 (1.00) GPR3CYBBNOX5NOX4NOX1
Diphenyleneiodonium SCHEMBL5547280 0.68 GPR3 (0.94) GPR3CYBBNOX5NOX4NOX1
SCHEMBL671133 0.64 CYP2A6 (0.67) TSHRNPC1TP53CYP1A2SMN1; SMN2
SCHEMBL29802156 0.64 CYP2A6 (0.67) TSHRNPC1TP53CYP1A2SMN1; SMN2
SCHEMBL29883244 0.64 CYP2A6 (0.67) TSHRNPC1TP53CYP1A2SMN1; SMN2
Hydrogen Sulfide SCHEMBL8574751 0.61 CYP2A6 (0.63) TSHRNPC1TP53SMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND JSR CORPORATION (JP) 2017-02-09 US disclosed
US-9523911-B2 Radiation-sensitive resin composition, resist pattern-forming method, acid generator and compound JSR CORPORATION (JP) 2016-12-20 US disclosed
US-9188858-B2 Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound JSR CORPORATION (JP) 2015-11-17 US disclosed
US-9152044-B2 2015-10-06 US disclosed
US-9122154-B2 Radiation-sensitive resin composition, and radiation-sensitive acid generating agent JSR CORPORATION (JP) 2015-09-01 US disclosed
US-9104102-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2015-08-11 US disclosed
US-8916333-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-12-23 US disclosed
US-20140342288-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND JSR CORPORATION (JP) 2014-11-20 US disclosed
US-8889336-B2 Radiation-sensitive resin composition and radiation-sensitive acid generating agent JSR CORPORATION (JP) 2014-11-18 US disclosed
US-8889335-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-11-18 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
US-7235341-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-26 US disclosed
US-7232640-B1 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-19 US disclosed
US-20070128547-A1 POSITIVE RESIST COMPOSITION FUJI PHOTO FILM CO., LTD. 2007-06-07 US disclosed
US-7223516-B2 Positive type photoresist composition FUJIFILM CORPORATION (JP) 2007-05-29 US disclosed
US-7214733-B2 Positive type resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-05-08 US disclosed
US-7192681-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 US disclosed
US-20070054214-A1 Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions JSR CORPORATION (JP) 2007-03-08 US disclosed
US-7179578-B2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-20070003871-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-01-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND RER1, ASIC1, GAR1 GPR3 950/4885CYBB 2696/4885NOX5 600/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.