SCHEMBL8078746

SCHEMBL8078746

Cc1ccc(S(=O)(=O)OS(c2ccccc2)(c2cccc(OC(C)(C)C)c2)c2cccc(OC(C)(C)C)c2)cc1

nearest known ligand 0.41

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.41
SMN1; SMN2 Q16637 2/20 0.41
ALDH1A1 P00352 4/20 0.39
MEN1 O00255 2/20 0.39
KMT2A Q03164 2/20 0.39
TDP1 Q9NUW8 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
BCHE P06276 2/20 0.37
ACHE P22303 2/20 0.37
FFAR1 O14842 1/20 0.36
VDR P11473 1/20 0.36
CYP3A4 P08684 1/20 0.35
CYP2C19 P33261 1/20 0.35
PTGES2 Q9H7Z7 2/20 0.35
LMNA P02545 1/20 0.34
HPGD P15428 1/20 0.34
GAA P10253 1/20 0.34
KEAP1 Q14145 1/20 0.34
NFE2L2 Q16236 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6757964 1.00 HTT (0.41) HTTSMN1; SMN2ALDH1A1MEN1KMT2A
SCHEMBL8077093 0.96 HTT (0.40) HTTSMN1; SMN2ALDH1A1MEN1KMT2A
SCHEMBL64770 0.89 HTT (0.45) HTTSMN1; SMN2ALDH1A1MEN1KMT2A
SCHEMBL65270 0.89 HTT (0.45) HTTSMN1; SMN2ALDH1A1MEN1KMT2A
SCHEMBL8903648 0.89 FFAR4 (0.41) HTTALDH1A1TDP1L3MBTL1BCHE
SCHEMBL8644649 0.89 FFAR1 (0.37) SMN1; SMN2ALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL8920104 0.87 HTT (0.44) HTTSMN1; SMN2ALDH1A1MEN1KMT2A
SCHEMBL3141175 0.85 FFAR4 (0.47) HTTSMN1; SMN2BCHEACHELMNA
SCHEMBL482368 0.85 TDP1 (0.46) HTTSMN1; SMN2ALDH1A1MEN1KMT2A
SCHEMBL6765038 0.85 KMT2A (0.37) HTTSMN1; SMN2ALDH1A1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6106993-A HIGHLY SENSITIVE TO ACTINIC RADIATION SUCH AS DEEP-UV, ELECTRON BEAM AND X-RAY, CAN BE DEVELOPED WITH ALKALINE AQUEOUS SOLUTION TO FORM A PATTERN, AND IS THUS SUITABLE FOR USE IN A FINE PATTERNING TECHNIQUE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-08-22 US disclosed