SCHEMBL64770

SCHEMBL64770

Cc1ccc(S(=O)(=O)OS(c2ccccc2)(c2ccccc2)c2ccc(OC(C)(C)C)cc2)cc1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTT P42858 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.45
FFAR1 O14842 1/20 0.40
BCHE P06276 2/20 0.39
ACHE P22303 2/20 0.39
VDR P11473 1/20 0.39
CYP3A4 P08684 2/20 0.38
CYP2C19 P33261 1/20 0.38
MEN1 O00255 3/20 0.37
KMT2A Q03164 3/20 0.37
CA12 O43570 2/20 0.37
CA9 Q16790 2/20 0.37
LMNA P02545 2/20 0.37
MAPT P10636 1/20 0.37
GAA P10253 1/20 0.37
CYP1A2 P05177 1/20 0.37
ATM Q13315 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
ALDH1A1 P00352 5/20 0.37
KEAP1 Q14145 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL65270 1.00 HTT (0.45) HTTSMN1; SMN2FFAR1BCHEACHE
SCHEMBL482368 0.95 TDP1 (0.46) HTTSMN1; SMN2CYP2C19MEN1KMT2A
SCHEMBL64968 0.94 BCHE (0.43) HTTSMN1; SMN2BCHEACHEVDR
SCHEMBL8496289 0.94 BCHE (0.43) HTTSMN1; SMN2BCHEACHEVDR
SCHEMBL3197600 0.94 TDP1 (0.40) HTTSMN1; SMN2CYP2C19MEN1KMT2A
SCHEMBL8920104 0.89 HTT (0.44) HTTSMN1; SMN2BCHEACHEVDR
SCHEMBL8078746 0.89 HTT (0.41) HTTSMN1; SMN2FFAR1BCHEACHE
SCHEMBL6757964 0.89 HTT (0.41) HTTSMN1; SMN2FFAR1BCHEACHE
SCHEMBL8494335 0.89 ALDH1A1 (0.46) BCHEACHECYP3A4CYP2C19MEN1
SCHEMBL5709656 0.89 ENPP2 (0.44) HTTSMN1; SMN2BCHEACHECYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1038 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6841334-B2 Onium salts and positive resist materials using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-11 US claimed
US-6730451-B2 FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-05-04 US claimed
US-6660447-B2 Copolymers of fluorinated vinyl phenol units and acrylonitrile units has high transmittance to VUV radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-09 US claimed
US-6436606-B1 POLYMERS AND PHOTORESISTS COATING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-20 US claimed
US-6337171-B1 AS A RESIST APPLICABLE TO FAR ULTRAVIOLET RAYS SUCH AS A KRF EXCIMER LASER, CHARGED PARTICLE RAYS SUCH AS ELECTRON BEAMS, AND X-RAYS JSR CORPORATION (JP) 2002-01-08 US claimed
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2026-05-28 US disclosed
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4664197-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
US-12448485-B2 Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-10-21 US disclosed
US-20250298315-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-25 US disclosed
US-5972560-A A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed
US-5942367-A HIGH SENSITIVITY, RESOLUTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-08-24 US disclosed
EP-0908783-A1 Resist compositions, their preparation and use for patterning processes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0908473-A1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
US-5876900-A POLYHYDROXYSTYRENE POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-02 US disclosed
EP-0898201-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-02-24 EP disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed
EP-0615163-A1 Onium salts and positive resist materials using the same Shin-Etsu Chemical Co., Ltd. (JP) 1994-09-14 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 HTT 4860/4885SMN1; SMN2 3419/4885FFAR1 715/4885
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT CBR3, CBR1, NOTUM HTT 3518/4885SMN1; SMN2 2208/4885FFAR1 697/4885
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION RPS21, CA11, RPL21 HTT 4300/4885SMN1; SMN2 564/4885FFAR1 2313/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.