Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTT | P42858 | 1/20 | 0.45 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.45 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.40 |
| ▸ | BCHE | P06276 | 2/20 | 0.39 |
| ▸ | ACHE | P22303 | 2/20 | 0.39 |
| ▸ | VDR | P11473 | 1/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.38 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.38 |
| ▸ | MEN1 | O00255 | 3/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.37 |
| ▸ | CA12 | O43570 | 2/20 | 0.37 |
| ▸ | CA9 | Q16790 | 2/20 | 0.37 |
| ▸ | LMNA | P02545 | 2/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | GAA | P10253 | 1/20 | 0.37 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.37 |
| ▸ | ATM | Q13315 | 1/20 | 0.37 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.37 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL64770 | 1.00 | HTT (0.45) | HTTSMN1; SMN2FFAR1BCHEACHE | |
| SCHEMBL482368 | 0.95 | TDP1 (0.46) | HTTSMN1; SMN2CYP2C19MEN1KMT2A | |
| SCHEMBL64968 | 0.94 | BCHE (0.43) | HTTSMN1; SMN2BCHEACHEVDR | |
| SCHEMBL8496289 | 0.94 | BCHE (0.43) | HTTSMN1; SMN2BCHEACHEVDR | |
| SCHEMBL3197600 | 0.94 | TDP1 (0.40) | HTTSMN1; SMN2CYP2C19MEN1KMT2A | |
| SCHEMBL8920104 | 0.89 | HTT (0.44) | HTTSMN1; SMN2BCHEACHEVDR | |
| SCHEMBL8078746 | 0.89 | HTT (0.41) | HTTSMN1; SMN2FFAR1BCHEACHE | |
| SCHEMBL6757964 | 0.89 | HTT (0.41) | HTTSMN1; SMN2FFAR1BCHEACHE | |
| SCHEMBL8494335 | 0.89 | ALDH1A1 (0.46) | BCHEACHECYP3A4CYP2C19MEN1 | |
| SCHEMBL5709656 | 0.89 | ENPP2 (0.44) | HTTSMN1; SMN2BCHEACHECYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 751 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6841334-B2 | Onium salts and positive resist materials using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-11 | — | — | US | claimed |
| US-5624787-A | NITROGENOUS COMPOUND AND SULFONIUM COMPOUND FOR POSITIVE PHOTORESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-04-29 | — | — | US | claimed |
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | ADEKA CORPORATION (JP) | 2026-05-28 | — | — | US | disclosed |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-02 | — | — | US | disclosed |
| US-12583973-B2 | Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-03-24 | — | — | US | disclosed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-4664197-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-17 | — | — | EP | disclosed |
| US-12448485-B2 | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-10-21 | — | — | US | disclosed |
| US-20250298315-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-25 | — | — | US | disclosed |
| EP-4617775-A1 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-17 | — | — | EP | disclosed |
| EP-0665220-B1 | Novel sulfonium salt and chemically amplified positive resist composition | SHINETSU CHEMICAL CO (JP) | 1999-04-07 | — | — | EP | disclosed |
| US-5876900-A | POLYHYDROXYSTYRENE POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-03-02 | — | — | US | disclosed |
| EP-0887705-A1 | Resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-30 | — | — | EP | disclosed |
| US-5691112-A | P-TOLUENESULFONIC ACID TRIS(P-TERT-BUTOXYPHENYL) SULFONIUM AS PHOTOSENSITIVE ACID GENERATOR; FORMING SOLUBLE SURFACE LAYER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-11-25 | — | — | US | disclosed |
| US-5679496-A | CONTAINING SULFONIUM SALT HAVING TERT-BUTOXYCARBONYLMETHOXY GROUP(S) AS ACID LABILE GROUPS; SENSITIVITY, RESOLUTION, ETCH AND HEAT RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-10-21 | — | — | US | disclosed |
| US-5633409-A | POSITIVE RESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-05-27 | — | — | US | disclosed |
| US-5624787-A | NITROGENOUS COMPOUND AND SULFONIUM COMPOUND FOR POSITIVE PHOTORESISTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1997-04-29 | — | — | US | disclosed |
| EP-0665220-A1 | Novel sulfonium salt and chemically amplified positive resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1995-08-02 | — | — | EP | disclosed |
| EP-0615163-A1 | Onium salts and positive resist materials using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 1994-09-14 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | HTT 4860/4885SMN1; SMN2 3419/4885FFAR1 715/4885 |
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | CBR3, CBR1, NOTUM | HTT 3518/4885SMN1; SMN2 2208/4885FFAR1 697/4885 |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | RPS21, CA11, RPL21 | HTT 4300/4885SMN1; SMN2 564/4885FFAR1 2313/4885 |
| US-12583973-B2 | Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component | PRDM9, ARCN1, PUF60 | HTT 3346/4885SMN1; SMN2 2618/4885FFAR1 640/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.