Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX1 | P07099 | 1/20 | 0.34 |
| ▸ | PDK1 | Q15118 | 1/20 | 0.33 |
| ▸ | PDK2 | Q15119 | 1/20 | 0.33 |
| ▸ | PDK3 | Q15120 | 1/20 | 0.33 |
| ▸ | PDK4 | Q16654 | 1/20 | 0.33 |
| ▸ | NAAA | Q02083 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL824245 | 1.00 | EPHX1 (0.34) | EPHX1PDK1PDK2PDK3PDK4 | |
| SCHEMBL824312 | 0.98 | EPHX1 (0.32) | EPHX1PDK1PDK2PDK3PDK4 | |
| SCHEMBL10259396 | 0.88 | CHRM2 (0.31) | EPHX1 | |
| SCHEMBL10087713 | 0.85 | EPHX1 (0.36) | EPHX1PDK1PDK2PDK3PDK4 | |
| SCHEMBL10087711 | 0.85 | EPHX1 (0.36) | EPHX1PDK1PDK2PDK3PDK4 | |
| SCHEMBL10087712 | 0.83 | EPHX1 (0.33) | EPHX1NAAACYP19A1 | |
| SCHEMBL47512 | 0.81 | HMGCR (0.40) | EPHX1NAAACYP19A1 | |
| SCHEMBL13127639 | 0.81 | EPHX1 (0.45) | EPHX1PDK1PDK2PDK3PDK4 | |
| SCHEMBL110743 | 0.81 | EPHX1 (0.45) | EPHX1PDK1PDK2PDK3PDK4 | |
| SCHEMBL47408 | 0.81 | HMGCR (0.40) | EPHX1NAAACYP19A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9040220-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-9034556-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-19 | — | — | US | disclosed |
| US-8900788-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-8742038-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-06-03 | — | — | US | disclosed |
| US-20140127626-A1 | RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER | RIKEN (JP) | 2014-05-08 | — | — | US | disclosed |
| US-8642244-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8574813-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-11-05 | — | — | US | disclosed |
| US-8518629-B2 | Resist composition for immersion exposure and method of forming resist pattern using the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-08-27 | — | — | US | disclosed |
| US-8519073-B2 | Compound and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-08-27 | — | — | US | disclosed |
| US-8501387-B2 | — | — | 2013-08-06 | — | — | US | disclosed |
| US-20090042130-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO. LTD (JP) | 2009-02-12 | — | — | US | disclosed |
| US-7488568-B2 | Resist composition, method of forming resist pattern, compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-10 | — | — | US | disclosed |
| US-20090023097-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311515-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080090171-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | GNG2, ACAD9, SCO2 | EPHX1 478/4885PDK1 4097/4885PDK2 2314/4885 |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | RER1, ACAD9, RRS1 | EPHX1 1161/4885PDK1 3620/4885PDK2 2908/4885 |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | C1R, CYP1B1, C1S | EPHX1 1795/4885PDK1 2859/4885PDK2 1265/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.