Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 2/20 | 0.40 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.38 |
| ▸ | FKBP1A | P62942 | 5/20 | 0.37 |
| ▸ | NAAA | Q02083 | 2/20 | 0.35 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.34 |
| ▸ | CCR2 | P41597 | 1/20 | 0.33 |
| ▸ | ENO1 | P06733 | 1/20 | 0.32 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.32 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | POLB | P06746 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL47512 | 1.00 | HMGCR (0.40) | HMGCREPHX1FKBP1ANAAACYP19A1 | |
| SCHEMBL47524 | 0.98 | HMGCR (0.40) | HMGCREPHX1FKBP1ANAAACYP19A1 | |
| SCHEMBL2734982 | 0.91 | HMGCR (0.37) | HMGCREPHX1FKBP1ANAAACYP19A1 | |
| SCHEMBL16591000 | 0.90 | HMGCR (0.36) | HMGCREPHX1FKBP1ANAAACYP19A1 | |
| SCHEMBL16591088 | 0.86 | FKBP1A (0.36) | HMGCREPHX1FKBP1ANAAACYP19A1 | |
| SCHEMBL10260297 | 0.86 | FKBP1A (0.36) | HMGCREPHX1FKBP1ANAAACYP19A1 | |
| SCHEMBL10260305 | 0.85 | FKBP1A (0.40) | HMGCREPHX1FKBP1ANAAA | |
| SCHEMBL2734960 | 0.85 | FKBP1A (0.38) | HMGCREPHX1FKBP1A | |
| SCHEMBL18898078 | 0.84 | EPHX1 (0.36) | EPHX1FKBP1ANAAACYP19A1 | |
| SCHEMBL10087713 | 0.84 | EPHX1 (0.36) | EPHX1FKBP1ANAAACYP19A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 628 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-11754926-B2 | Method of forming resist pattern, resist composition and method of producing the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-20230229078-A1 | CHEMICAL LIQUID SUPPLY METHOD AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2023-07-20 | — | — | US | disclosed |
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11703756-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11693321-B2 | Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-04 | — | — | US | disclosed |
| US-20230205084-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20080090173-A1 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-17 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20070231738-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | HMGCR 1978/4885EPHX1 3257/4885FKBP1A 466/4885 |
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | HAAO, HPD, IL4 | HMGCR 256/4885EPHX1 267/4885FKBP1A 4228/4885 |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | AFF1, FASN, FAR1 | HMGCR 469/4885EPHX1 2554/4885FKBP1A 3867/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.