Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAOA | P21397 | 1/20 | 0.43 |
| ▸ | MAOB | P27338 | 1/20 | 0.43 |
| ▸ | ATM | Q13315 | 1/20 | 0.41 |
| ▸ | GAA | P10253 | 1/20 | 0.41 |
| ▸ | MEN1 | O00255 | 2/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.40 |
| ▸ | USP2 | O75604 | 1/20 | 0.40 |
| ▸ | CYP2C9 | P11712 | 3/20 | 0.39 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.39 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.39 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.39 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.39 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.39 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.39 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.39 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.39 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.39 |
| ▸ | HDAC9 | Q9UKV0 | 1/20 | 0.39 |
| ▸ | HDAC5 | Q9UQL6 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2407012 | 0.81 | MAOA (0.45) | MAOAMAOBATMGAAMEN1 | |
| SCHEMBL15147092 | 0.81 | MAOA (0.45) | MAOAMAOBATMGAAMEN1 | |
| SCHEMBL29473842 | 0.81 | MAOA (0.45) | MAOAMAOBATMGAAMEN1 | |
| SCHEMBL5691250 | 0.80 | GAA (0.46) | MAOAMAOBATMGAAMEN1 | |
| SCHEMBL16597291 | 0.80 | GAA (0.46) | MAOAMAOBATMGAAMEN1 | |
| SCHEMBL14086685 | 0.75 | ALDH1A1 (0.45) | MAOAMAOBGAAMEN1KMT2A | |
| SCHEMBL21311753 | 0.75 | CYP2C9 (0.40) | MAOAMAOBGAAMEN1KMT2A | |
| SCHEMBL20785353 | 0.74 | MAOA (0.46) | MAOAMAOBATMGAAMEN1 | |
| SCHEMBL20785351 | 0.74 | MAOA (0.46) | MAOAMAOBATMGAAMEN1 | |
| SCHEMBL20785354 | 0.74 | MAOA (0.46) | MAOAMAOBATMGAAMEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 99 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0237781-B1 | PHENYL AND HETEROCYCLIC TETRAHYDROPYRIDYL AND PIPERAZINYL ALKOXY-BENZHETEROCYCLIC COMPOUNDS AS ANTIPSYCHOTIC AGENTS | WARNER-LAMBERT COMPANY (US) | 1991-04-24 | — | — | EP | claimed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20230375925-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN | FUJIFILM CORPORATION (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230367210-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-11703758-B2 | Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230132693-A1 | RINSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230139009-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-10012903-B2 | Resist composition and pattern forming process | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2018-07-03 | — | — | US | disclosed |
| US-10012902-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-07-03 | — | — | US | disclosed |
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-20110171580-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-14 | — | — | US | disclosed |
| US-7923195-B2 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-04-12 | — | — | US | disclosed |
| US-7887991-B2 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-15 | — | — | US | disclosed |
| US-20100227273-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100227274-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20090297979-A1 | Polymerizable compound, polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20090208886-A1 | DOUBLE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20090202940-A1 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-13 | — | — | US | disclosed |
| US-20090202947-A1 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO.,LTD (JP) | 2009-08-13 | — | — | US | disclosed |
| US-7410747-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2008-08-12 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090297979-A1 | Polymerizable compound, polymer, positive resist composition, and patterning process using the same | PRRC2A, PUF60, POLR2B | MAOA 4164/4885MAOB 4536/4885ATM 4216/4885 |
| US-10012902-B2 | Positive resist composition and pattern forming process | EWSR1, SRPRA, SRPRB | MAOA 4543/4885MAOB 4658/4885ATM 3402/4885 |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, COL1A1, RAD51 | MAOA 1762/4885MAOB 607/4885ATM 233/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.