Water

Water

SCHEMBL8984048

O.O.[W].[Zr]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL19924291 1.00
Water SCHEMBL18044802 0.82
Water SCHEMBL21956078 0.82
Water SCHEMBL15577110 0.82
Water SCHEMBL11655347 0.82
Water SCHEMBL9559511 0.82
Water SCHEMBL26332 0.82
Water SCHEMBL22749398 0.82
Water SCHEMBL1711800 0.82
Water SCHEMBL4581159 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230298904-A1 ELECTRON EXCITATION ATOMIC LAYER ETCH LAM RES CORP (US) 2023-09-21 US claimed
US-20230298904-A1 ELECTRON EXCITATION ATOMIC LAYER ETCH LAM RES CORP (US) 2023-09-21 US disclosed
CN-116525388-A Graphene needle tip modified by low work function material and preparation method thereof 国家纳米科学中心 2023-08-01 CN disclosed
US-11637022-B2 Electron excitation atomic layer etch LAM RESEARCH CORPORATION (US) 2023-04-25 US disclosed
US-11161987-B2 Mixed transition metal oxides silica xerogels as antifouling/fouling release surfaces THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK (US) 2021-11-02 US disclosed
US-20210280433-A1 ELECTRON EXCITATION ATOMIC LAYER ETCH LAM RESEARCH CORPORATION (US) 2021-09-09 US disclosed
EP-3821457-A1 ELECTRON EXCITATION ATOMIC LAYER ETCH Lam Research Corporation (US) 2021-05-19 EP disclosed
CN-110666123-B Method for enhancing heat resistance and wear resistance of withdrawal and straightening roller of continuous casting machine and withdrawal and straightening roller obtained by method 燕山大学 2021-03-19 CN disclosed
CN-112424914-A Electronically stimulated atomic layer etching 朗姆研究公司 2021-02-26 CN disclosed
CN-110666123-A Method for enhancing heat resistance and wear resistance of withdrawal and straightening roller of continuous casting machine and withdrawal and straightening roller obtained by method 燕山大学 2020-01-10 CN disclosed
US-20180362778-A1 MIXED TRANSITION METAL OXIDES SILICA XEROGELS AS ANTIFOULING/FOULING RELEASE SURFACES THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK (US) 2018-12-20 US disclosed
WO-2017100629-A1 MIXED TRANSITION METAL OXIDES SILICA XEROGELS AS ANTIFOULING/FOULING RELEASE SURFACES THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK (US) 2017-06-15 WO disclosed
CN-103943437-B A kind of field-emission electron emission source emitter tip forming devices and shaping method thereof 北京大学 2017-01-04 CN disclosed
CN-104134604-B A kind of field emitting electronic source electron beam emitting performance evaluating apparatus and evaluating method thereof 北京大学 2016-10-05 CN disclosed
US-20140253137-A1 TEST PATTERN DESIGN FOR SEMICONDUCTOR DEVICES AND METHOD OF UTILIZING THEREOF MACRONIX INTERNATIONAL CO., LTD. (TW) 2014-09-11 US disclosed
EP-0585840-B1 Magnetic immersion field emission electron gun systems capable of reducing aberration of electrostatic lens TOSHIBA KK (JP) 1996-10-16 EP disclosed
US-5498874-A Defect detecting apparatus and method KABUSHIKI KAISHA TOSHIBA (JP) 1996-03-12 US disclosed
US-5371371-A Magnetic immersion field emission electron gun systems capable of reducing aberration of electrostatic lens KABUSHIKI KAISHA TOSHIBA (JP) 1994-12-06 US disclosed
US-5362968-A Optic column having particular major/minor axis magnification ratio KABUSHIKI KAISHA TOSHIBA (JP) 1994-11-08 US disclosed
EP-0585840-A1 Magnetic immersion field emission electron gun systems capable of reducing aberration of electrostatic lens KABUSHIKI KAISHA TOSHIBA (JP) 1994-03-09 EP disclosed