Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 12/20 | 0.43 |
| ▸ | ESR2 | Q92731 | 10/20 | 0.43 |
| ▸ | PDCD1 | Q15116 | 1/20 | 0.43 |
| ▸ | CD274 | Q9NZQ7 | 1/20 | 0.43 |
| ▸ | LMNA | P02545 | 2/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.39 |
| ▸ | AR | P10275 | 2/20 | 0.39 |
| ▸ | SLC6A2 | P23975 | 2/20 | 0.39 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.39 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.39 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.39 |
| ▸ | PGR | P06401 | 1/20 | 0.39 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.39 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.39 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.39 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.39 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.39 |
| ▸ | DRD1 | P21728 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10077946 | 0.84 | CYP1A2 (0.40) | LMNACYP3A4CYP2C9CYP1A2CYP2D6 | |
| SCHEMBL10077145 | 0.84 | AOC3 (0.37) | LMNA | |
| SCHEMBL10077949 | 0.84 | BRD4 (0.40) | LMNACYP2C9TDP1HPGDTSHR | |
| SCHEMBL12448026 | 0.84 | CYP1A2 (0.40) | LMNACYP3A4CYP2C9CYP1A2CYP2D6 | |
| SCHEMBL13063293 | 0.83 | TRPA1 (0.40) | ESR1ESR2LMNACYP3A4SLC6A2 | |
| SCHEMBL13588182 | 0.81 | ALDH1A1 (0.43) | ESR2LMNATDP1CYP1A2CYP2D6 | |
| SCHEMBL13146772 | 0.81 | PTGS1 (0.39) | PTGS1 | |
| SCHEMBL14619687 | 0.80 | CYP3A4 (0.36) | CYP3A4SLC6A2SLC6A3CYP2C9CYP1A2 | |
| SCHEMBL10248843 | 0.80 | ACACB (0.41) | SLC6A2SLC6A3SLC6A4KDM4E | |
| SCHEMBL13245006 | 0.80 | CA1 (0.32) | ESR1ESR2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8338078-B2 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-25 | — | — | US | disclosed |
| US-8227183-B2 | Stable formation of high precision fine patterns utilizing positive resist whose solubility increases in positive developer and decreases in negative developer upon irradiation | FUJIFILM CORPORATION (JP) | 2012-07-24 | — | — | US | disclosed |
| WO-2012043890-A1 | GAP EMBEDDING COMPOSITION, METHOD OF EMBEDDING GAP AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE BY USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-04-05 | — | — | WO | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| US-20110318691-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| EP-2362267-A1 | Chemically amplified negative resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2011-08-31 | — | — | EP | disclosed |
| EP-2360526-A1 | Chemically amplified negative resist composition for E beam or EUV lithography and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2011-08-24 | — | — | EP | disclosed |
| US-7923195-B2 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-04-12 | — | — | US | disclosed |
| US-7875746-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-01-25 | — | — | US | disclosed |
| US-7858287-B2 | Photosensitive resin, and photosensitive composition | HYOGO PREFECTURE (JP) | 2010-12-28 | — | — | US | disclosed |
| US-20080090172-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20080085464-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUNDS FOR USE IN THE POSITIVE PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD OF THE POLYMER COMPOUNDS, COMPOUNDS FOR USE IN THE MANUFACTURE OF THE POLYMER COMPOUNDS, AND PATTERN-FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081288-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| EP-1906248-A1 | Resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-04-02 | — | — | EP | disclosed |
| EP-1906241-A1 | Resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-04-02 | — | — | EP | disclosed |
| US-7323286-B2 | Photosensitive composition, compound used in the same, and patterning method using the same | FUJIFILM CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| US-20070218406-A1 | Acid generator; exposure to actinic radiation | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070148592-A1 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070105042-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-10 | — | — | US | disclosed |
| US-20070003871-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-01-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110318691-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | RIF1, MSI2, SLIRP | ESR1 544/4885ESR2 872/4885PDCD1 4786/4885 |
| US-20080081288-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | PPOX, TYR, ERCC4 | ESR1 1914/4885ESR2 3130/4885PDCD1 3929/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.