Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.46 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.43 |
| ▸ | ENPP3 | O14638 | 2/20 | 0.43 |
| ▸ | ENPP1 | P22413 | 2/20 | 0.43 |
| ▸ | ENPP2 | Q13822 | 2/20 | 0.43 |
| ▸ | TSHR | P16473 | 3/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.42 |
| ▸ | POLB | P06746 | 2/20 | 0.41 |
| ▸ | TP53 | P04637 | 2/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.41 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.41 |
| ▸ | MAPT | P10636 | 2/20 | 0.40 |
| ▸ | ATM | Q13315 | 1/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.40 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.40 |
| ▸ | HTT | P42858 | 1/20 | 0.40 |
| ▸ | GAA | P10253 | 1/20 | 0.39 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.39 |
| ▸ | GLA | P06280 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29904429 | 0.86 | POLB (0.41) | ALDH1A1ENPP3ENPP1ENPP2POLB | |
| SCHEMBL8751838 | 0.85 | ENPP3 (0.46) | ALDH1A1ENPP3ENPP1ENPP2LMNA | |
| SCHEMBL7696102 | 0.83 | ENPP3 (0.52) | ENPP3ENPP1ENPP2POLB | |
| SCHEMBL7722429 | 0.83 | POLB (0.46) | ALDH1A1ADORA3ENPP3ENPP1ENPP2 | |
| SCHEMBL7695448 | 0.81 | ENPP3 (0.54) | ALDH1A1ENPP3ENPP1ENPP2POLB | |
| SCHEMBL7724555 | 0.80 | ELANE (0.39) | ALDH1A1ENPP3ENPP1ENPP2TSHR | |
| SCHEMBL7721795 | 0.80 | GLA (0.38) | ALDH1A1ENPP3ENPP1ENPP2TSHR | |
| SCHEMBL1089095 | 0.80 | ADORA3 (0.40) | ALDH1A1ADORA3ENPP3ENPP1ENPP2 | |
| SCHEMBL1743909 | 0.78 | EPHX2 (0.43) | ALDH1A1TSHRPOLBEPHX2MAPT | |
| SCHEMBL6735766 | 0.78 | S1PR5 (0.44) | TSHRTP53 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 327 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2326744-B1 | METAL COMPOSITIONS AND METHODS OF MAKING SAME | PRYOG LLC (US) | 2022-06-01 | — | — | EP | claimed |
| EP-4667537-A1 | PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2025-12-24 | — | — | EP | disclosed |
| US-20250382500-A1 | PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE | TOKYO OHKA KOGYO CO LTD (JP) | 2025-12-18 | — | — | US | disclosed |
| US-20250285785-A1 | DRY FILM | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. | 2025-09-11 | — | — | US | disclosed |
| US-20250218775-A1 | MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE | GEMINATIO, INC. | 2025-07-03 | — | — | US | disclosed |
| US-20250216782-A1 | MASKING PROCESS USING SWITCHABLE POLYMER | TOKYO ELECTRON LTD (JP) | 2025-07-03 | — | — | US | disclosed |
| US-20250216790-A1 | MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE | GEMINATIO, INC., | 2025-07-03 | — | — | US | disclosed |
| US-20250216763-A1 | ANTI-SPACER MASKING PROCESS USING RESIST LAYER WITH SOLUBILITY SHIFTING AGENT | TOKYO ELECTRON LTD (JP) | 2025-07-03 | — | — | US | disclosed |
| US-20250216783-A1 | ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER | TOKYO ELECTRON LTD (JP) | 2025-07-03 | — | — | US | disclosed |
| WO-2025128332-A1 | POLY-O-HYDROXYAMIDES COMPRISING NOVEL INDANE BIS-O-AMINOPHENOLS, PHOTOSENSITIVE COMPOSITIONS, DIELECTRIC FILMS, AND BUFFER COATINGS CONTAINING THE SAME | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2025-06-19 | — | — | WO | disclosed |
| US-5558971-A | HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 1996-09-24 | — | — | US | disclosed |
| EP-0704762-A1 | Resist material and pattern formation | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1996-04-03 | — | — | EP | disclosed |
| US-5468589-A | Heat resistant, photosensitive patterns | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 1995-11-21 | — | — | US | disclosed |
| EP-0679951-A1 | Positive resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1995-11-02 | — | — | EP | disclosed |
| EP-0675410-A1 | Resist composition for deep ultraviolet light | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1995-10-04 | — | — | EP | disclosed |
| US-5389491-A | Negative working resist composition | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1995-02-14 | — | — | US | disclosed |
| US-5350660-A | Chemical amplified resist material containing photosensitive compound capable of generating an acid and specific polystyrene copolymer having functional groups that become alkali-soluble under an acid atmosphere | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 1994-09-27 | — | — | US | disclosed |
| EP-0579420-A2 | Negative working resist material and pattern forming process | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1994-01-19 | — | — | EP | disclosed |
| EP-0520642-A1 | Resist material and pattern formation process | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1992-12-30 | — | — | EP | disclosed |
| EP-0440374-A2 | Chemical amplified resist material | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1991-08-07 | — | — | EP | disclosed |