SCHEMBL958157

SCHEMBL958157

COC(=O)C(Br)C1C2CC3CC(C2)CC1C3

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 1/20 0.37
EPHX2 P34913 4/20 0.37
ALDH1A1 P00352 2/20 0.34
L3MBTL1 Q9Y468 2/20 0.33
ITGB1 P05556 1/20 0.33
ITGA4 P13612 1/20 0.33
GLA P06280 1/20 0.33
HSD17B10 Q99714 1/20 0.32
KMT2A Q03164 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
CHRNB2 P17787 1/20 0.32
CHRNA4 P43681 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3217482 0.77 EPHX1 (0.37) EPHX1EPHX2ALDH1A1L3MBTL1HSD17B10
SCHEMBL888272 0.73 EPHX1 (0.38) EPHX1EPHX2ALDH1A1L3MBTL1KMT2A
SCHEMBL6555589 0.72 HSD11B1 (0.39) EPHX1EPHX2ALDH1A1L3MBTL1ITGB1
SCHEMBL6555586 0.72 HSD11B1 (0.39) EPHX1EPHX2ALDH1A1L3MBTL1ITGB1
SCHEMBL888449 0.69 L3MBTL1 (0.35) EPHX1EPHX2ALDH1A1L3MBTL1
SCHEMBL15618893 0.69
SCHEMBL15216856 0.67 EPHX1 (0.36) EPHX1EPHX2ALDH1A1L3MBTL1
SCHEMBL2554561 0.65 TP53 (0.47) ALDH1A1KMT2ANPSR1
SCHEMBL16435696 0.65 EPHX1 (0.49) EPHX1EPHX2L3MBTL1HSD17B10
SCHEMBL31572346 0.65 THRB (0.44) ALDH1A1KMT2ANPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116615405-A Compound, polymer, composition for film formation, method for forming pattern, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2023-08-18 CN disclosed
CN-112424283-A Composition for forming optical member, compound and resin 三菱瓦斯化学株式会社 2021-02-26 CN disclosed
CN-108008600-B Radiation-sensitive composition 三菱瓦斯化学株式会社 2021-02-09 CN disclosed
WO-2020226150-A1 COMPOUND AND PRODUCTION METHOD THEREOF, RESIN, COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, UNDERLAYER FILM FOR LITHOGRAPHY, OPTICAL COMPONENT, AND METHOD FOR PURIFYING COMPOUND OR RESIN 学校法人 関西大学 2020-11-12 WO disclosed
CN-111615507-A Compound, resin, composition, and pattern forming method 三菱瓦斯化学株式会社 2020-09-01 CN disclosed
CN-106462059-B Resist material, resist composition, and resist pattern forming method 三菱瓦斯化学株式会社 2020-07-28 CN disclosed
CN-104995559-B Resist composition, resist pattern forming method, and polyphenol derivative used therefor 三菱瓦斯化学株式会社 2020-04-07 CN disclosed
WO-2020027206-A1 OPTICAL COMPONENT-FORMING COMPOSITION, OPTICAL COMPONENT, COMPOUND, AND RESIN 三菱瓦斯化学株式会社 2020-02-06 WO disclosed
US-9244349-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US disclosed
US-20110008728-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-01-13 US disclosed
US-20100310985-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-12-09 US disclosed